SVD640S中文資料士蘭微數(shù)據(jù)手冊PDF規(guī)格書

GENERAL DESCRIPTION

SVD640T/D/S is an N-channel enhancement mode power MOS field

effect transistor which is produced using Silan proprietary S-RinTM

structure VDMOS technology. The improved process and cell structure

have been especially tailored to minimize on-state resistance, provide

superior switching performance, and withstand high energy pulse in

the avalanche and commutation mode.

These devices are widely used in AC-DC power supplies, DC-DC

converters and H-bridge PWM motor drivers.

FEATURES

? 18A,200V,RDS(on)(typ.)=0.12?@VGS=10V

? Low gate charge

? Low Crss

? Fast switching

? Improved dv/dt capability