SVD640D中文資料士蘭微數(shù)據(jù)手冊PDF規(guī)格書

GENERAL DESCRIPTION

SVD640T/D/F is an N-channel enhancement mode power MOS field

effect transistor which is produced using Silan proprietary S-RinTM

structure middle/low-voltage VDMOS technology. The improved planar

stripe cell and the improved guard ring terminal have been especially

tailored to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche and

commutation mode.

These devices are widely used in AC-DC power suppliers, DC-DC

converters and H-bridge PWM motor drivers.

FEATURES

? 18A,200V,RDS(on)(typ.)=0.12?@VGS=10V

? Low gate charge

? Low Crss

? Fast switching

? Improved dv/dt capability