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STL7NM60N

Low input capacitance and gate charge, Low gate input resistance

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

7NM60

7A,600VN-CHANNELSUPER-JUNCTIONMOSFET

DESCRIPTION TheUTC7NM60isahighvoltagesuperjunctionMOSFETandis designedtohavebettercharacteristics. TheUTC7NM60Utilizinganadvancedcharge-balance technology,enhancesystemefficiency,improveEMIandreliability. suchaslowgatecharge,lowon-stateresistanceandhavea

UTCUnisonic Technologies

友順友順科技股份有限公司

STD7NM60N

N-channel600V,5A,0.84ohm,DPAK,TO-220FP,TO-220,IPAKsecondgenerationMDmeshPowerMOSFET

Description ThesedevicesareN-channelPowerMOSFETsrealizedusingthesecondgenerationofMDmeshTMtechnology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproductoffersimprovedon-resistance,l

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD7NM60N

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STF7NM60N

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STF7NM60N

N-channel600V,5A,0.84ohm,DPAK,TO-220FP,TO-220,IPAKsecondgenerationMDmeshPowerMOSFET

Description ThesedevicesareN-channelPowerMOSFETsrealizedusingthesecondgenerationofMDmeshTMtechnology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproductoffersimprovedon-resistance,l

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP7NM60N

N-channel600V,5A,0.84ohm,DPAK,TO-220FP,TO-220,IPAKsecondgenerationMDmeshPowerMOSFET

Description ThesedevicesareN-channelPowerMOSFETsrealizedusingthesecondgenerationofMDmeshTMtechnology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproductoffersimprovedon-resistance,l

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP7NM60N

iscN-ChannelMOSFETTransistor

FEATURES ?DrainCurrent–ID=5A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=900mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Switchingapp

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STU7NM60N

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STU7NM60N

N-channel600V,5A,0.84ohm,DPAK,TO-220FP,TO-220,IPAKsecondgenerationMDmeshPowerMOSFET

Description ThesedevicesareN-channelPowerMOSFETsrealizedusingthesecondgenerationofMDmeshTMtechnology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproductoffersimprovedon-resistance,l

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    STL7NM60N

  • 功能描述：

    MOSFET N-Ch 600V 5.8A 0.805 Second Gen MDmesh

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST
1726+
POWERFLAT5X5
6528
只做進(jìn)口原裝正品現(xiàn)貨,假一賠十!
 詢價(jià)
ST
23+
QFN
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
ST
18+
QFN
85600
保證進(jìn)口原裝可開17%增值稅發(fā)票
 詢價(jià)
ST
2020+
QFN
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
STMicroelectronics
21+
14-PowerFLAT?(5x5)
3000
100%進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng))!
 詢價(jià)
STM原廠目錄
24+
PowerFLAT5x5
28500
授權(quán)代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價(jià)銷售
 詢價(jià)
ST
21+
QFN
320212
原裝現(xiàn)貨假一賠十
 詢價(jià)
STMicroelectronics
2021++
原裝原裝
5850
原裝正品 現(xiàn)貨庫(kù)存價(jià)格優(yōu)勢(shì)!
 詢價(jià)
ST(意法)
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
 詢價(jià)
22+
NA
3000
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更多STL7NM60N供應(yīng)商 更新時(shí)間2024-12-31 18:08:00

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