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STD7NM60N

N-channel 600 V, 5 A, 0.84 ohm, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh Power MOSFET

Description ThesedevicesareN-channelPowerMOSFETsrealizedusingthesecondgenerationofMDmeshTMtechnology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproductoffersimprovedon-resistance,l

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD7NM60N

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

7NM60

7A,600VN-CHANNELSUPER-JUNCTIONMOSFET

DESCRIPTION TheUTC7NM60isahighvoltagesuperjunctionMOSFETandis designedtohavebettercharacteristics. TheUTC7NM60Utilizinganadvancedcharge-balance technology,enhancesystemefficiency,improveEMIandreliability. suchaslowgatecharge,lowon-stateresistanceandhavea

UTCUnisonic Technologies

友順友順科技股份有限公司

STF7NM60N

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STF7NM60N

N-channel600V,5A,0.84ohm,DPAK,TO-220FP,TO-220,IPAKsecondgenerationMDmeshPowerMOSFET

Description ThesedevicesareN-channelPowerMOSFETsrealizedusingthesecondgenerationofMDmeshTMtechnology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproductoffersimprovedon-resistance,l

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STL7NM60N

Lowinputcapacitanceandgatecharge,Lowgateinputresistance

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP7NM60N

N-channel600V,5A,0.84ohm,DPAK,TO-220FP,TO-220,IPAKsecondgenerationMDmeshPowerMOSFET

Description ThesedevicesareN-channelPowerMOSFETsrealizedusingthesecondgenerationofMDmeshTMtechnology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproductoffersimprovedon-resistance,l

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP7NM60N

iscN-ChannelMOSFETTransistor

FEATURES ?DrainCurrent–ID=5A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=900mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Switchingapp

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STU7NM60N

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STU7NM60N

N-channel600V,5A,0.84ohm,DPAK,TO-220FP,TO-220,IPAKsecondgenerationMDmeshPowerMOSFET

Description ThesedevicesareN-channelPowerMOSFETsrealizedusingthesecondgenerationofMDmeshTMtechnology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproductoffersimprovedon-resistance,l

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號：

    STD7NM60N

  • 功能描述：

    MOSFET N-channel 600 V5 A 0.84 Ohm DPAK

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
ST
2020+
TO252
18600
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
ST
24+
17+
217
TO-252-3
 詢價(jià)
ST
23+
TO252
6996
只做原裝正品現(xiàn)貨
 詢價(jià)
STM
21+
TO-252-3 (DPAK)
27500
原裝正品 有掛有貨
 詢價(jià)
ST/意法
24+
TO-252
3000
只做原廠渠道 可追溯貨源
 詢價(jià)
STM
21+
5000
TO-252-3 (DPAK)
 詢價(jià)
ST/意法半導(dǎo)體
22+
TO-252-3
6006
原裝正品現(xiàn)貨 可開增值稅發(fā)票
 詢價(jià)
STM
23+
TO-252-3 (DPAK)
10000
原裝現(xiàn)貨支持送檢
 詢價(jià)
ST/意法
2021+
TO-252-3
9000
原裝現(xiàn)貨,隨時(shí)歡迎詢價(jià)
 詢價(jià)
ST
22+
30000
原裝現(xiàn)貨,可追溯原廠渠道
 詢價(jià)
更多STD7NM60N供應(yīng)商 更新時(shí)間2025-1-1 13:58:00

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