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STGB20NC60V

Marking：GB20NC60V；Package：D2PAK；30 A - 600 V - very fast IGBT

Description ThisIGBTutilizestheadvancedPowerMESH? processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features ?Highfrequencyoperationupto50kHz ?LowerCRES/CIESratio(nocross-conduction susceptibility) ?Highcurrentcapa

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGB20NC60V

30 A - 600 V - very fast IGBT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGB20NC60V_V01

30 A - 600 V - very fast IGBT

Description ThisIGBTutilizestheadvancedPowerMESH? processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features ?Highfrequencyoperationupto50kHz ?LowerCRES/CIESratio(nocross-conduction susceptibility) ?Highcurrentcapa

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

GB20NC60V

30A-600V-veryfastIGBT

Description ThisIGBTutilizestheadvancedPowerMESH? processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features ?Highfrequencyoperationupto50kHz ?LowerCRES/CIESratio(nocross-conduction susceptibility) ?Highcurrentcapa

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

GP20NC60V

30A-600V-veryfastIGBT

Description ThisIGBTutilizestheadvancedPowerMESH? processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features ?Highfrequencyoperationupto50kHz ?LowerCRES/CIESratio(nocross-conduction susceptibility) ?Highcurrentcapa

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

GW20NC60V

30A-600V-veryfastIGBT

Description ThisIGBTutilizestheadvancedPowerMESH? processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features ?Highfrequencyoperationupto50kHz ?LowerCRES/CIESratio(nocross-conduction susceptibility) ?Highcurrentcapa

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

GW20NC60VD

N-CHANNEL30A-600VTO-247VeryFastPowerMESHIGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH?IGBTs,withoutstandingperformances.Thesuffix“V”identifiesafamilyoptimizedforhighfrequencyapplications. GeneralFeatures

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGP20NC60V

N-CHANNEL30A-600V-TO-220/TO-247VeryFastPowerMESHIGBT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGP20NC60V

30A-600V-veryfastIGBT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGP20NC60V

30A-600V-veryfastIGBT

Description ThisIGBTutilizestheadvancedPowerMESH? processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features ?Highfrequencyoperationupto50kHz ?LowerCRES/CIESratio(nocross-conduction susceptibility) ?Highcurrentcapa

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    STGB20NC60V

  • 功能描述：

    IGBT 晶體管 30 A 600V FAST IGBT

  • RoHS：

    否

  • 制造商：

    Fairchild Semiconductor

  • 配置：

    集電極—發(fā)射極最大電壓

  • VCEO：

    650 V

  • 集電極—射極飽和電壓：

    2.3 V

  • 柵極/發(fā)射極最大電壓：

    20 V 在25

  • C的連續(xù)集電極電流：

    150 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    187 W

  • 封裝/箱體：

    TO-247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
STMicro.
23+
D2PAK
7750
全新原裝優(yōu)勢
 詢價(jià)
ST
24+
TO-263
7500
詢價(jià)
ST
1926+
D2PAK
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
STM原廠目錄
24+
D2PAK
28500
授權(quán)代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價(jià)銷售
 詢價(jià)
STM
1809+
TO-263
1675
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
22+
NA
2000
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
ST
22+
D2PAK
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
ST
23+
TO263
16900
正規(guī)渠道,只有原裝!
 詢價(jià)
ST/意法
22+
N
30000
十七年VIP會(huì)員,誠信經(jīng)營，一手貨源，原裝正品可零售！
 詢價(jià)
STMicroelectronics
2022+
D2PAK
38550
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
 詢價(jià)
更多STGB20NC60V供應(yīng)商 更新時(shí)間2025-3-12 14:04:00

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