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STD8N06

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.21? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTED CHARACTERIZATION ■TH

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

MTD8N06E

TMOSPOWERFET8.0AMPERES60VOLTSRDS(on)=0.12OHM

TMOSE-FETPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoveryt

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP8N06

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

MTP8N06

TMOSPOWERFET8.0AMPERES60VOLTSRDS(on)=0.12OHM

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP8N06E

TMOSPOWERFET8.0AMPERES60VOLTSRDS(on)=0.12OHM

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

PHT8N06

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technolgythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHT8N06LT

TrenchMOS?transistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogic levelfield-effectpowertransistorina plasticenvelopesuitableforsurface mounting.Thedevicefeaturesvery lowon-stateresistanceandhas integralzenerdiodesgivingESD protection.Itisintendedforusein DC-DCconvertersand

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PHT8N06LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC-DCconvertersandgenera

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHT8N06T

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technolgythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

詳細參數(shù)

  • 型號：

    STD8N06

  • 制造商：

    STMicroelectronics

  • 功能描述：

    MOSFET N D-PAK

供應(yīng)商型號品牌批號封裝庫存備注價格
ST/意法
24+
TO-252
20000
只做原廠渠道 可追溯貨源
 詢價
ST
23+
TO-252
8795
詢價
24+
N/A
1100
詢價
ST
24+
TO-252
35200
一級代理/放心采購
 詢價
拓鋒
23+
SOT-23
69820
終端可以免費供樣,支持BOM配單!
 詢價
ST
24+
TO-251/252
6430
原裝現(xiàn)貨/歡迎來電咨詢
 詢價
ST
1709+
TO-252/D-PAK
32500
普通
 詢價
S
23+
TO-252
10000
公司只做原裝正品
 詢價
ST/意法
2022+
TO-252
20000
原廠代理 終端免費提供樣品
 詢價
ST
23+
TO-252
4500
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!
 詢價
更多STD8N06供應(yīng)商 更新時間2025-3-1 16:36:00

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