STD8N06中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 0.21 ?

■ AVALANCHE RUGGED TECHNOLOGY

■ 100 AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100°C

■ LOW GATE CHARGE

■ HIGH CURRENT CAPABILITY

■ 175°C OPERATING TEMPERATURE

■ APPLICATION ORIENTED

CHARACTERIZATION

■ THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX ”-1”)

■ SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL

(SUFFIX ”T4”)

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SOLENOID AND RELAY DRIVERS

■ REGULATORS

■ DC-DC & DC-AC CONVERTERS

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)