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20P06

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

CEB20P06

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-14A,RDS(ON)=125mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=175mW@VGS=-4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB20P06

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-15A,RDS(ON)=105m?@VGS=-10V. RDS(ON)=150m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB20P06

P-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED20P06

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-13A,RDS(ON)=105m?@VGS=-10V. RDS(ON)=150m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED20P06

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-13A,RDS(ON)=125mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=175mW@VGS=-4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP20P06

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-15A,RDS(ON)=105m?@VGS=-10V. RDS(ON)=150m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP20P06

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-14A,RDS(ON)=125mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=175mW@VGS=-4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU20P06

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-13A,RDS(ON)=125mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=175mW@VGS=-4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU20P06

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-13A,RDS(ON)=105m?@VGS=-10V. RDS(ON)=150m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CHM20P06PAPT

P-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT13Ampere FEATURE *Smallflatpackage.(TO-252A) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOchenmko

力勤股份有限公司

EMB20P06A

P??hannelLogicLevelEnhancementModeFieldEffectTransistor

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

ME20P06

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

MTD20P06

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

MTD20P06

TMOSPOWERFETLOGICLEVEL15AMPERES60VOLTSRDS(on)=175MOHM

HDTMOSE-FET?PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate Thisadvancedhigh–celldensityHDTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–so

Motorola

Motorola, Inc

MTD20P06HDL

TMOSPOWERFETLOGICLEVEL15AMPERES60VOLTSRDS(on)=175MOHM

HDTMOSE-FET?PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate Thisadvancedhigh–celldensityHDTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–so

Motorola

Motorola, Inc

MTD20P06HDL

P??hannelDPAKPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NP20P06SLG

SWITCHINGP-CHANNELPOWERMOSFET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP20P06SLG

MOSFIELDEFFECTTRANSISTOR

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP20P06SLG

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
原廠原封
93480
集團(tuán)化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
詢價
ON
2018+
TO252
6528
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心
詢價
ON
22+23+
TO252
74582
絕對原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
詢價
三年內(nèi)
1983
納立只做原裝正品13590203865
詢價
ON/安森美
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
ON/安森美
21+
TO-252
1725
原裝現(xiàn)貨假一賠十
詢價
ON/安森美
22+
TO-252
28600
只做原裝正品現(xiàn)貨假一賠十一級代理
詢價
ON/安森美
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
ON/安森美
2022
TO-252
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價
ON
16+
TO252
5000
原包裝原標(biāo)現(xiàn)貨,假一罰十,
詢價
更多STD20P06HDL供應(yīng)商 更新時間2024-10-27 17:08:00