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20P06

P-Channel 60-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

CEB20P06

P-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB20P06

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-15A,RDS(ON)=105m?@VGS=-10V. RDS(ON)=150m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB20P06

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-14A,RDS(ON)=125mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=175mW@VGS=-4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED20P06

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-13A,RDS(ON)=125mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=175mW@VGS=-4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED20P06

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-13A,RDS(ON)=105m?@VGS=-10V. RDS(ON)=150m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP20P06

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-15A,RDS(ON)=105m?@VGS=-10V. RDS(ON)=150m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP20P06

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-14A,RDS(ON)=125mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=175mW@VGS=-4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU20P06

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-13A,RDS(ON)=125mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=175mW@VGS=-4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU20P06

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-13A,RDS(ON)=105m?@VGS=-10V. RDS(ON)=150m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CHM20P06PAPT

P-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT13Ampere FEATURE *Smallflatpackage.(TO-252A) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOchenmko

力勤股份有限公司

EMB20P06A

P??hannelLogicLevelEnhancementModeFieldEffectTransistor

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

ME20P06

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

MTD20P06

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

MTD20P06

TMOSPOWERFETLOGICLEVEL15AMPERES60VOLTSRDS(on)=175MOHM

HDTMOSE-FET?PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate Thisadvancedhigh–celldensityHDTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–so

Motorola

Motorola, Inc

MTD20P06HDL

TMOSPOWERFETLOGICLEVEL15AMPERES60VOLTSRDS(on)=175MOHM

HDTMOSE-FET?PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate Thisadvancedhigh–celldensityHDTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–so

Motorola

Motorola, Inc

MTD20P06HDL

P??hannelDPAKPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NP20P06SLG

MOSFIELDEFFECTTRANSISTOR

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP20P06SLG

SWITCHINGP-CHANNELPOWERMOSFET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP20P06SLG

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
CET
24+
TO-251
706
詢價
AOS
2020+
TO-252
467
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
JXW
22+
TO-252
20000
深圳原裝現(xiàn)貨正品有單價格可談
詢價
AOS
21+
TO-252
467
原裝現(xiàn)貨假一賠十
詢價
AOS
TO-252
608900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
詢價
AOS
22+
TO-252
25000
原裝現(xiàn)貨,價格優(yōu)惠,假一罰十
詢價
AOS
13+
TO-252
467
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
ST意法半導(dǎo)體
24+23+
SOP8
12580
16年現(xiàn)貨庫存供應(yīng)商終端BOM表可配單提供樣品
詢價
AOS/萬代
23+
NA/
407
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
詢價
ON
2023+
SO-252
8700
原裝現(xiàn)貨
詢價
更多20P06供應(yīng)商 更新時間2024-10-27 16:30:00