STAC4932F

1200W Pulse - 100V HF/VHF DMOS TRANSISTOR in STAC Flangeless package

The STAC4932F is a N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications.\n The STAC4932B benefits from the latest generation of efficient, patent-pending pack; ? Excellent thermal stability\n? Common source push-pull configuration\n? POUT = 1000 W min. (1200 W typ.) with 26 dB gain @ 123 MHz? Pulse conditions: 1 msec - 10%\n? In compliance with the 2002/95/EC European directive\n? ST air cavity packaging technology - STAC?package;

STAC4932F

Excellent thermal stability

STAC4932F

Package：STAC244F；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：TRANS RF PWR N-CH STAC244F

STAC4932F1MR

350 W 50 V HF/VHF DMOS in STAC moisture-resistant flangeless package

Features ?ImprovedruggednessV(BR)DSS>200V ?Loadmismatch65:1allphases@350W-50V-123MHz ?POUT=450Wtyp.with24dBgainat123MHz ?Incompliancewiththe2002/95/ECEuropeandirective ?Moistureresistantpackagespecificallydesignedtooperateinextreme environments

STAC4932F1MR

350 W 50 V HF/VHF DMOS in STAC moisture-resistant flangeless package

The STAC4932F1MR is an N-channel MOS fieldeffect RF power transistor. It is intended for use in 50 V / 80 V ISM applications up to 250 MHz.\n The STAC4932F1MR benefits from the latest generation of environmentally designed packaging, ruggedized against cyclic high moisture operation and severe ; ? Improved ruggedness V(BR)DSS > 200 V\n? Load mismatch 65:1 all phases @ 350 W - 50 V - 123 MHz\n? POUT = 450 W typ. with 24 dB gain at 123 MHz\n? In compliance with the 2002/95/EC European directive\n? Moisture resistant package specifically designed to operate in extreme environments\n? Drying re;