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SSM3J327R

Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS??

○PowerManagementSwitchApplications ?1.5-Vdrive ?LowON-resistance:RDS(ON)=240m?(max)(@VGS=-1.5V) RDS(ON)=168m?(max)(@VGS=-1.8V) RDS(ON)=123m?(max)(@VGS=-2.5V)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

SSM3J327R

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

SSM3J327R

P-Channel 20-V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?LoadSwitch ?PASwitch ?DC/DCConverters

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

SSM3J327R

MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications ?PowerManagementSwitches Features (1)1.5-Vdrive (2)Lowdrain-sourceon-resistance :RDS(ON)=240mΩ(max)(@VGS=-1.5V) RDS(ON)=168mΩ(max)(@VGS=-1.8V) RDS(ON)=123mΩ(max)(@VGS=-2.5V) RDS(ON)=93mΩ(max)(@VGS=-4.5V)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

SSM3J327R_V01

MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications ?PowerManagementSwitches Features (1)1.5-Vdrive (2)Lowdrain-sourceon-resistance :RDS(ON)=240mΩ(max)(@VGS=-1.5V) RDS(ON)=168mΩ(max)(@VGS=-1.8V) RDS(ON)=123mΩ(max)(@VGS=-2.5V) RDS(ON)=93mΩ(max)(@VGS=-4.5V)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

SSM3J327R_14

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

SSM3J327F

P-Channel20-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?LoadSwitch ?PASwitch ?DC/DCConverters

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

SSM3J327F

Field-EffectTransistorSiliconP-ChannelMOSType(U-MOS??

○PowerManagementSwitchApplications ?1.5-Vdrive ?LowON-resistance:RDS(ON)=242m?(max)(@VGS=-1.5V) RDS(ON)=170m?(max)(@VGS=-1.8V) RDS(ON)=125m?(max)(@VGS=-2.5V)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

詳細(xì)參數(shù)

  • 型號(hào):

    SSM3J327R

  • 制造商:

    TOSHIBA

  • 制造商全稱:

    Toshiba Semiconductor

  • 功能描述:

    Field-Effect Transistor Silicon P-Channel MOS Type(U-MOSⅥ)

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
TOSHIBA
16+
SOT-23F
12340
原裝現(xiàn)貨假一罰十
詢價(jià)
SKsemi/臺(tái)灣SK
24+
SOT-23F
20000
十年沉淀唯有原裝
詢價(jià)
TOSHIBA/東芝
22+
SOT-23
9850
只做原裝正品假一賠十!正規(guī)渠道訂貨!
詢價(jià)
TOSHIBA/東芝
24+
SOT23-3
503302
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
詢價(jià)
TOSHIBA
10+
SOT23F
3000
詢價(jià)
TOSHIBA
2016+
SOT23
6000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價(jià)
Toshiba
19+
SOT-23F
200000
詢價(jià)
VB
2019
SOT-23F
55000
絕對(duì)原裝正品假一罰十!
詢價(jià)
TOSHIBA
20+
SOT-23F
43000
原裝優(yōu)勢(shì)主營型號(hào)-可開原型號(hào)增稅票
詢價(jià)
TOSHIBA
2020+
SOT-23F
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
更多SSM3J327R供應(yīng)商 更新時(shí)間2024-10-25 8:00:00