首頁 >SSM3J327R/LF(T>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Field-EffectTransistorSiliconP-ChannelMOSType(U-MOS?? ○PowerManagementSwitchApplications ?1.5-Vdrive ?LowON-resistance:RDS(ON)=242m?(max)(@VGS=-1.5V) RDS(ON)=170m?(max)(@VGS=-1.8V) RDS(ON)=125m?(max)(@VGS=-2.5V) | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
P-Channel20-V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?LoadSwitch ?PASwitch ?DC/DCConverters | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | ||
MOSFETsSiliconP-ChannelMOS(U-MOSVI) Applications ?PowerManagementSwitches Features (1)1.5-Vdrive (2)Lowdrain-sourceon-resistance :RDS(ON)=240mΩ(max)(@VGS=-1.5V) RDS(ON)=168mΩ(max)(@VGS=-1.8V) RDS(ON)=123mΩ(max)(@VGS=-2.5V) RDS(ON)=93mΩ(max)(@VGS=-4.5V) | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
P-Channel20-V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?LoadSwitch ?PASwitch ?DC/DCConverters | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
Field-EffectTransistorSiliconP-ChannelMOSType(U-MOS?? ○PowerManagementSwitchApplications ?1.5-Vdrive ?LowON-resistance:RDS(ON)=240m?(max)(@VGS=-1.5V) RDS(ON)=168m?(max)(@VGS=-1.8V) RDS(ON)=123m?(max)(@VGS=-2.5V) | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA |
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