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SPP17N80C3

N-Channel MOSFET Transistor

?DESCRIPTION ?Highpeakcurrentcapability ?Ultralowgatecharge ?Ultraloweffectivecapacitances ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.29? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPP17N80C3

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?PG-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) ?Pb

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP17N80C3

New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP17N80C3

CoolMOS Power Transistor Features New revolutionary high voltage technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP17N80C3

Cool MOS??Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP17N80C3_07

New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP17N80C3_08

CoolMOS Power Transistor Features New revolutionary high voltage technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPW17N80C3

CoolMOSTMPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPW17N80C3

CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnologyExtremedv/dtrated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPW17N80C3

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO247 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPW17N80C3

CoolMOSPowerTransistor

Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor:

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPW17N80C3

iscN-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤290m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPW17N80C3A

CoolMOSPowerTransistor

Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor:

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號：

    SPP17N80C3

  • 功能描述：

    MOSFET COOL MOS N-CH 800V

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON
23+
TO-220
40000
原裝正品公司現(xiàn)貨
 詢價
INFINEON
23+
TO-220
32457
原裝正品現(xiàn)貨當(dāng)天發(fā)貨提供BOM
 詢價
INFINEON
2020+
TO-220
18600
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
INFINEON/英飛凌
2021+
TO-220
18189
原裝進(jìn)口假一罰十
 詢價
INFINEON/英飛凌
24+
TO-220
3580
原裝現(xiàn)貨/15年行業(yè)經(jīng)驗歡迎詢價
 詢價
INFINEON
20+
TO-220
50000
詢價
INFINEON/英飛凌
20+
TO-220
2000
進(jìn)口原裝支持含稅
 詢價
英飛凌
23+
TO-220
20000
原裝正品,假一罰十
 詢價
INFINEON
20+
TO-220
10000
原裝現(xiàn)貨熱賣
 詢價
INFINEON
21+
TO-220
4000
全新原裝公司現(xiàn)貨
詢價
更多SPP17N80C3供應(yīng)商 更新時間2024-12-27 16:12:00

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