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SPP07N65C3

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP07N65C3

Cool MOS Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ●PG-TO-220-3:Fullyisolatedpackage(2500VAC;1minute) ?Pb-freeleadplating;RoHScompliant ?Quali

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP07N65C3

N-Channel MOSFET Transistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPP07N65C3

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP07N65C3_10

Cool MOS Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ●PG-TO-220-3:Fullyisolatedpackage(2500VAC;1minute) ?Pb-freeleadplating;RoHScompliant ?Quali

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP07N65C3_09

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

07N65C3

CoolMOSPowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ●PG-TO-220-3:Fullyisolatedpackage(2500VAC;1minute) ?Pb-freeleadplating;RoHScompliant ?Quali

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ISPP07N65C3

N-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPA07N65C3

CoolMOSPowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ●PG-TO-220-3:Fullyisolatedpackage(2500VAC;1minute) ?Pb-freeleadplating;RoHScompliant ?Quali

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA07N65C3

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA07N65C3

iscN-ChannelMOSFETTransistor

?FEATURES ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Highpeakcurrentcapability ?Improvedtransconductance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPA07N65C3

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPI07N65C3

iscN-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.6? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPI07N65C3

CoolMOSPowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ●PG-TO-220-3:Fullyisolatedpackage(2500VAC;1minute) ?Pb-freeleadplating;RoHScompliant ?Quali

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPI07N65C3

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPI07N65C3

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號：

    SPP07N65C3

  • 功能描述：

    MOSFET COOL MOS N-CH 730V 7.3A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
Infineon(英飛凌)
23+
標(biāo)準(zhǔn)封裝
7844
原廠渠道供應(yīng),大量現(xiàn)貨,原型號開票。
 詢價(jià)
INFINEON
23+
TO-220
65400
詢價(jià)
INFINEON
24+
TO-220
7550
絕對原裝現(xiàn)貨,價(jià)格低,歡迎詢購!
 詢價(jià)
INF進(jìn)口原
17+
TO-220
6200
詢價(jià)
INFINEON
23+
TO-220
7936
詢價(jià)
INFINEON
1816+
TO-220
6523
科恒偉業(yè)!只做原裝正品,假一賠十!
 詢價(jià)
17+
NA
9700
只做全新進(jìn)口原裝,現(xiàn)貨庫存
 詢價(jià)
INFINEON
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
INFINEON
22+
P-TO220-3-1
17868
原裝現(xiàn)貨庫存.價(jià)格優(yōu)勢
 詢價(jià)
INFINEON
23+
TO-220
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價(jià)
更多SPP07N65C3供應(yīng)商 更新時(shí)間2024-12-27 15:09:00

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