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SMM20P10

P-CHANNEL ENHANCEMENT MODE TRANSISTOR

ETC1List of Unclassifed Manufacturers

etc未分類(lèi)制造商未分類(lèi)制造商

CEB20P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-20A,RDS(ON)=130mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED20P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-100V,-16A,RDS(ON)=130mΩ@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED20P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-16A,RDS(ON)=130mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP20P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-100V,-20A,RDS(ON)=130mΩ@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP20P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-20A,RDS(ON)=130mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU20P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-16A,RDS(ON)=130mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU20P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-100V,-16A,RDS(ON)=130mΩ@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

F20P10G

P-ChannelEnhancementMOSFET

Features ?VDS=-100V,ID=-20A ?RDS(ON)=86mΩ@VGS=-10V(Typ.) ?RDS(ON)=90mΩ@VGS=-4.5V(Typ.) ?HighPowerandcurrenthandingcapability ?Leadfreeproductisacquired ?SurfaceMountPackage MainApplications ?BatteryProtection ?LoadSwitch ?PowerManagement

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

MCU20P10

P-ChannelEnhancementModeFieldEffectTransistor

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MTH20P10

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-20A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.15Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTM20P10

POWERFIELDEFFECTTRANSISTOR

Motorola

Motorola, Inc

MTM20P10

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-20A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.15Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTM20P10

PowerFieldEffectTransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

NCE20P10J

NCEP-ChannelEnhancementModePowerMOSFET

Description TheNCE20P10Jusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltages.Thisdeviceissuitableforuseasaloadswitching applicationandawidevarietyofotherapplications. GeneralFeatures ●VDS=-20V,ID=-10A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司

PAL20P10

ProgammableArrayLogicSeries24(PALSeries24)

NSCNational Semiconductor (TI)

美國(guó)國(guó)家半導(dǎo)體美國(guó)國(guó)家半導(dǎo)體公司

PAL20P10A

ProgammableArrayLogicSeries24(PALSeries24)

NSCNational Semiconductor (TI)

美國(guó)國(guó)家半導(dǎo)體美國(guó)國(guó)家半導(dǎo)體公司

PAL20P10AC

ProgammableArrayLogicSeries24(PALSeries24)

NSCNational Semiconductor (TI)

美國(guó)國(guó)家半導(dǎo)體美國(guó)國(guó)家半導(dǎo)體公司

PAL20P10AJ

ProgammableArrayLogicSeries24(PALSeries24)

NSCNational Semiconductor (TI)

美國(guó)國(guó)家半導(dǎo)體美國(guó)國(guó)家半導(dǎo)體公司

PAL20P10AJC

ProgammableArrayLogicSeries24(PALSeries24)

NSCNational Semiconductor (TI)

美國(guó)國(guó)家半導(dǎo)體美國(guó)國(guó)家半導(dǎo)體公司

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N/A
1300
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PMI
2023+
3000
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AD
2020+
QFN
10
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AD
23+
QFN
8560
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ADI/亞德諾
21+
原封裝
13880
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ADI/亞德諾
原封裝
66900
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ADI/亞德諾
22+
66900
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VISHAY/威世
23+
SOT-23
11200
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VISHAY
23+
SOT-23
253223
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VISHAY
1809+
SOT-23-3
326
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更多SMM20P10供應(yīng)商 更新時(shí)間2024-11-16 16:00:00