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CEB20P10

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -100V,-20A,RDS(ON)=130mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED20P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-100V,-16A,RDS(ON)=130mΩ@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED20P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-16A,RDS(ON)=130mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP20P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-100V,-20A,RDS(ON)=130mΩ@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP20P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-20A,RDS(ON)=130mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU20P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-16A,RDS(ON)=130mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU20P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-100V,-16A,RDS(ON)=130mΩ@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

F20P10G

P-ChannelEnhancementMOSFET

Features ?VDS=-100V,ID=-20A ?RDS(ON)=86mΩ@VGS=-10V(Typ.) ?RDS(ON)=90mΩ@VGS=-4.5V(Typ.) ?HighPowerandcurrenthandingcapability ?Leadfreeproductisacquired ?SurfaceMountPackage MainApplications ?BatteryProtection ?LoadSwitch ?PowerManagement

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

G20P10KE

P-ChannelEnhancementModePowerMOSFET

Description TheG20P10KEusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

MCU20P10

P-ChannelEnhancementModeFieldEffectTransistor

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
CET
23+
TO-263
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
CET
20+
TO-263
38900
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
 詢價(jià)
CET/華瑞
23+
TO-263
10000
公司只做原裝正品
 詢價(jià)
CET/華瑞
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
CET/華瑞
2022
TO-263
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
CET/華瑞
2022+
TO-263
32500
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
CET
TO-263
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
 詢價(jià)
CET
23+
TO-263
6000
原裝正品，支持實(shí)單
 詢價(jià)
CET/華瑞
23+
NA/
200
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價(jià)
CET/華瑞
2022+
TO-263
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價(jià)
更多CEB20P10供應(yīng)商 更新時(shí)間2025-2-19 10:34:00

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