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CEB5175

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-55V,-50A,RDS(ON)=23mΩ@VGS=10V. RDS(ON)=28mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB5175

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -55V,-50A,RDS(ON)=23mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=28mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED5175

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-55V,-40A,RDS(ON)=23m?@VGS=-10V. RDS(ON)=28m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED5175

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -55V,-40A,RDS(ON)=23mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=28mW@VGS=-4.5V. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP5175

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -55V,-50A,RDS(ON)=23mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=28mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP5175

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-55V,-50A,RDS(ON)=23mΩ@VGS=10V. RDS(ON)=28mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU5175

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-55V,-40A,RDS(ON)=23m?@VGS=-10V. RDS(ON)=28m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU5175

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -55V,-40A,RDS(ON)=23mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=28mW@VGS=-4.5V. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZ5175

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -55V,-48A,RDS(ON)=23mW@VGS=-10V. RDS(ON)=28mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

EL5175

550MHzDifferentialLineReceivers

TheEL5175andEL5375aresingleandtriplehighbandwidthamplifiersdesignedtoextractthedifferencesignalfromnoisyenvironments.Theyareprimarilytargetedforapplicationssuchasreceivingsignalsfromtwisted-pairlinesoranyapplicationwherecommonmodenoiseinjectionislikelyto

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
主力推廣,可以零售
23+
QFP/QFN
3000
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價(jià)
CET/華瑞
23+
TO-263
360000
交期準(zhǔn)時(shí)服務(wù)周到
 詢價(jià)
SR
23+
T0-263
5000
原裝正品,假一罰十
 詢價(jià)
CET
24+
TO-263
90000
進(jìn)口原裝現(xiàn)貨假一罰十價(jià)格合理
 詢價(jià)
CET
24+
TO-263
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?
 詢價(jià)
CET
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢價(jià)
CET
TO-263
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
 詢價(jià)
CET
23+
TO-263
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
CET
23+
TO-263
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
CET
23+24
TO-263
38754
原裝正品渠道商,提供BOM一站式配單服務(wù)
 詢價(jià)
更多CEB5175供應(yīng)商 更新時(shí)間2025-2-11 11:10:00

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