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SKB02N120

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode Allowednumberofshortcircuits:1s. ?lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedforfrequencyinvertersforwashingmachi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKB02N120

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmitterControlledDiode Allowednumberofshortcircuits:1s. ?lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10?s ?Designedforfrequencyinvertersfor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKB02N120

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode ?40lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedfor: ???-Motorcontrols ???-Inverter ???-SMPS ?NPT-Technologyoffers: ???-verytightparameterdistributi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKB02N120_07

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode Allowednumberofshortcircuits:1s. ?lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedforfrequencyinvertersforwashingmachi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKB02N120_13

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmitterControlledDiode Allowednumberofshortcircuits:1s. ?lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10?s ?Designedforfrequencyinvertersfor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

02N120

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode ?40lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedfor: ???-Motorcontrols ???-Inverter ???-SMPS ?NPT-Technologyoffers: ???-verytightparameterdistributi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IXTP02N120P

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

IXTP02N120P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=0.2A@TC=25℃ ·DrainSourceVoltage :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedfo

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTY02N120P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=0.2A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=75Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTY02N120P

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號：

    SKB02N120

  • 功能描述：

    IGBT 晶體管 FAST IGBT NPT TECH 1200V 2A

  • RoHS：

    否

  • 制造商：

    Fairchild Semiconductor

  • 配置：

    集電極—發(fā)射極最大電壓

  • VCEO：

    650 V

  • 集電極—射極飽和電壓：

    2.3 V

  • 柵極/發(fā)射極最大電壓：

    20 V 在25

  • C的連續(xù)集電極電流：

    150 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    187 W

  • 封裝/箱體：

    TO-247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
Infineon(英飛凌)
23+
TO-263
1011
原廠直供,支持賬期,免費供樣,技術支持
 詢價
INFINEON/英飛凌
2021+
SOT-263
16905
原裝進口假一罰十
 詢價
INFINEON
23+
TO-263
489
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
英飛翎
17+
D2PAK(TO-263)
31518
原裝正品 可含稅交易
 詢價
Infineon(英飛凌)
23+
TO-263
11803
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊
 詢價
INFINEON
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
Infineon(英飛凌)
23+
25900
新到現(xiàn)貨,只有原裝
 詢價
INFINEON
24+
P-TO263-3-2
8866
詢價
INFINEON
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
INFINEON
23+
TO-263
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
更多SKB02N120供應商 更新時間2025-2-6 14:53:00

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