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SIHP11N80AE

E Series Power MOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Loweffectivecapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?IntegratedZenerdiodeESDprotection ?Materialcategorization:fordefinitionsofcompliance pleasesee

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHP11N80AE_V01

E Series Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHP11N80AE-GE3

E Series Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

11N80

11A,812VN-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

HFP11N80Z

800VN-ChannelMOSFET

SEMIHOW

SemiHow Co.,Ltd.

IXFH11N80

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOSTMFamily Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodrive

IXYS

IXYS Corporation

IXFH11N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.95Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFM11N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.95Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFM11N80

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOSTMFamily Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodrive

IXYS

IXYS Corporation

IXTH11N80

MegaMOSFET

N-ChannelEnhancementMode Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance(

IXYS

IXYS Corporation

IXTH11N80

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTM11N80

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTM11N80

MegaMOSFET

N-ChannelEnhancementMode Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance(

IXYS

IXYS Corporation

SFF11N80

11AMP/800Volts0.95廓N-ChannelMOSFET

SSDI

Solid States Devices, Inc

SFF11N80B

11AMP/800Volts0.95ohmN-ChannelPowerMOSFET

SSDI

Solid States Devices, Inc

SFF11N80N

11AMP/800Volts0.95ohmN-ChannelPowerMOSFET

SSDI

Solid States Devices, Inc

SFF11N80P

11AMP/800Volts0.95ohmN-ChannelPowerMOSFET

SSDI

Solid States Devices, Inc

SIHA11N80AE

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHA11N80E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHA11N80E

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
SILICONIXVISHAY
N/A
90000
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價
VISHAY(威世)
23+
TO220
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!
 詢價
VISHAY/威世通
21+
TO-220
10000
原裝現(xiàn)貨假一罰十
 詢價
VISHAY/威世
23+
NA/
20
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
24+
N/A
69000
一級代理-主營優(yōu)勢-實(shí)惠價格-不悔選擇
 詢價
Vishay Siliconix
22+
TO2203
9000
原廠渠道,現(xiàn)貨配單
 詢價
VISHAY(威世)
2112+
TO-220AB
105000
1000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
 詢價
VISHAY
1809+
TO-220
1675
就找我吧!--邀您體驗愉快問購元件!
 詢價
Vishay Siliconix
2022+
TO-220-3
38550
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
 詢價
VISHAY(威世)
23+
TO220AB3
6000
誠信服務(wù)，絕對原裝原盤
 詢價
更多SIHP11N80AE供應(yīng)商 更新時間2025-1-1 17:08:00

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