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SIHP15N60E

E Series Power MOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance ??pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHP15N60E

iscN-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SIHP15N60E

E Series Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHP15N60E_V01

E Series Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHP15N60E-BE3

E Series Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHP15N60E-E3

E Series Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHP15N60E-GE3

E Series Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SKB15N60

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKB15N60

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode ?75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKB15N60HS

HighSpeedIGBTinNPT-technology

?30lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedforoperationabove30kHz ?NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature -verytightparameterdistribution

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKB15N60HS

HighSpeedIGBTinNPT-technology30lowerEoffcomparedtopreviousgeneration

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKP15N60

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKP15N60

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode ?75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKW15N60

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKW15N60

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode ?75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA15N60CFD

CoolMOSTMPowerTransistorFeaturesIntrinsicfast-recoverybodydiode

Features ?Intrinsicfast-recoverybodydiode ?Extremelylowreverserecoverycharge ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDECfortargetapplications CoolMOSCFDdesignedfor: ?SoftswitchingPWMStages ?LCD&CRTTV

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA15N60CFD

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplication

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SPI15N60CFD

iscN-ChannelMOSFETTransistor

?DESCRITION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.33? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SPI15N60CFD

CoolMOSTMPowerTransistorIntrinsicfast-recoverybodydiode

Features ?Intrinsicfast-recoverybodydiode ?Extremelylowreverserecoverycharge ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDECfortargetapplications CoolMOSCFDdesignedfor: ?SoftswitchingPWMStages ?LCD&CRTTV

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP15N60CFD

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào)：

    SIHP15N60E

  • 功能描述：

    MOSFET 600V 280mOhm@10V 15A N-Ch E-SRS

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Vishay(威世)
2249+
61265
二十余載金牌老企 研究所優(yōu)秀合供單位 您的原廠窗口
 詢價(jià)
VISHAY
13+
TO-220
1900
只做原裝正品
 詢價(jià)
VISHAY/威世
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
Vishay
21+
15500
詢價(jià)
VISHAY/威世
23+
TO-220AB
10000
公司只做原裝正品
 詢價(jià)
VISHAY/威世
23+
TO220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
VISHAY/威世
2022
TO220
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
VISHAY/威世
2022+
TO-220
50000
原廠代理 終端免費(fèi)提供樣品
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Vishay
*
12
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
truesemi
2023+
TO-220
80000
一級(jí)代理/分銷(xiāo)渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
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更多SIHP15N60E供應(yīng)商 更新時(shí)間2024-10-27 8:00:00

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