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SIHLU120-E3

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHLU120-E3

N-Channel 100-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

B120-E3

SurfaceMountSchottkyBarrierRectifier

FEATURES ?Lowprofilepackage ?Idealforautomatedplacement ?Guardringforovervoltageprotection ?Lowpowerlosses,highefficiency ?Lowforwardvoltagedrop ?Highsurgecapability ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C ?Materialcategorization:Fordefiniti

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

B120-E3

Surface-MountSchottkyBarrierRectifier

FEATURES ?Lowprofilepackage ?Idealforautomatedplacement ?Guardringforovervoltageprotection ?Lowpowerlosses,highefficiency ?Lowforwardvoltagedrop ?Highsurgecapability ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C ?Materialcategorization:fordefinit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

MUR120-E3

Lowforwardvoltagedrop

FEATURES ?Glasspassivatedchipjunction ?Ultrafastreverserecoverytime ?Lowforwardvoltagedrop ?Lowleakagecurrent ?Lowswitchinglosses,highefficiency ?Highforwardsurgecapability ?Solderdip260°C,40s ?ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC T

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFR120-E3

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

SIHFR120-E3

IRFR120

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFU120-E3

IRFR120

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFU120-E3

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

SIHFU120-E3

N-Channel100-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

SIHLD120-E3

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHLR120-E3

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    SIHLU120-E3

  • 制造商：

    VISHAY

  • 制造商全稱(chēng)：

    Vishay Siliconix

  • 功能描述：

    Power MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
V
23+
IPAK
10000
公司只做原裝正品
 詢(xún)價(jià)
-
22+
IPAK
6000
十年配單,只做原裝
 詢(xún)價(jià)
VISHAY/威世
23+
TO251
12800
公司只有原裝 歡迎來(lái)電咨詢(xún)。
 詢(xún)價(jià)
VISHAY/威世
TO251
699839
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢(xún)價(jià)
VISHAY/威世
22+
TO251
12000
只做原裝、原廠(chǎng)優(yōu)勢(shì)渠道、假一賠十
 詢(xún)價(jià)
VISHAY/威世
24+
TO251
990000
明嘉萊只做原裝正品現(xiàn)貨
 詢(xún)價(jià)
VISHAY/威世
23+
TO251
6850
只做原廠(chǎng)原裝正品現(xiàn)貨!假一賠十!
 詢(xún)價(jià)
VIS
23+
TO-220
10000
原裝正品,假一罰十
 詢(xún)價(jià)
VB
21+
TO-220
10000
原裝現(xiàn)貨假一罰十
 詢(xún)價(jià)
2023+
TO-220
80000
一級(jí)代理/分銷(xiāo)渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢(xún)價(jià)
更多SIHLU120-E3供應(yīng)商 更新時(shí)間2025-1-8 10:06:00

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