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SIHFR120-E3

IRFR120

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFR120-E3

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

B120-E3

SurfaceMountSchottkyBarrierRectifier

FEATURES ?Lowprofilepackage ?Idealforautomatedplacement ?Guardringforovervoltageprotection ?Lowpowerlosses,highefficiency ?Lowforwardvoltagedrop ?Highsurgecapability ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C ?Materialcategorization:Fordefiniti

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

B120-E3

Surface-MountSchottkyBarrierRectifier

FEATURES ?Lowprofilepackage ?Idealforautomatedplacement ?Guardringforovervoltageprotection ?Lowpowerlosses,highefficiency ?Lowforwardvoltagedrop ?Highsurgecapability ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C ?Materialcategorization:fordefinit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

MUR120-E3

Lowforwardvoltagedrop

FEATURES ?Glasspassivatedchipjunction ?Ultrafastreverserecoverytime ?Lowforwardvoltagedrop ?Lowleakagecurrent ?Lowswitchinglosses,highefficiency ?Highforwardsurgecapability ?Solderdip260°C,40s ?ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC T

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFU120-E3

IRFR120

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFU120-E3

N-Channel100-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

SIHFU120-E3

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

SIHLD120-E3

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHLR120-E3

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHLU120-E3

N-Channel100-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

SIHLU120-E3

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    SIHFR120-E3

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    IRFR120

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
VB
2019
DPAK(TO-
55000
絕對(duì)原裝正品假一罰十!
 詢價(jià)
V
21+
DPAK(TO-
10001
詢價(jià)
VB
21+
DPAK(TO-
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
S
22+
DPAK(TO-
6000
十年配單,只做原裝
 詢價(jià)
S
22+
DPAK(TO-
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價(jià)
VISHAY/威世
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
VISHAY
21+
TO-252
9866
詢價(jià)
VISHAY
2022+
N/A
8162
詢價(jià)
VISHAY/威世
24+
N/A
39500
進(jìn)口原裝現(xiàn)貨 支持實(shí)單價(jià)優(yōu)
 詢價(jià)
出廠價(jià)
21+
N/A
3976
全新原裝虧本出
 詢價(jià)
更多SIHFR120-E3供應(yīng)商 更新時(shí)間2024-10-24 11:30:00

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