首頁 >SIGC25T120C>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
SIGC25T120C | IGBT Chip in NPT-technology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
IGBT Chip in NPT-technology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
IGBT Chip in NPT-technology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
IGBT Chip in NPT-technology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
TrenchgateField-StopIGBT DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.4V@IC=25A ·HighSpeedSwitching ·LowPowerLoss APPLICATIONS ·IndustrialPowerSupplies ·IndustrialDrives ·SolarInverters | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
TrenchgateField-StopIGBT DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.0V@IC=25A ·HighSpeedSwitching ·LowPowerLoss APPLICATIONS ·IndustrialPowerSupplies ·IndustrialDrives ·SolarInverters | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
IGBT-Power,Single,N-Channel,FieldStopVII(FS7),SCR,PowerTO247-3L1200V,1.38V,25A Description Usingthenovelfieldstop7thgenerationIGBTtechnology inTO2473?leadpackage,thisdeviceofferstheoptimum performancewithlowonstatevoltageandminimalswitchinglosses forbothhardandsoftswitchingtopologiesinautomotive applications. Features ?ExtremelyEffic | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
IGBT-Power,Co-PAK,N-Channel,FieldStopVII,(FS7),SCR,PowerTO247-3L1200V,1.38V,25A Description Usingthenovelfieldstop7thgenerationIGBTtechnology andtheGen7DiodeinTO2473?leadpackage,thisdeviceoffers theoptimumperformancewithlowonstatevoltageandminimal switchinglossesforbothhardandsoftswitchingtopologies inautomotiveapplications. Features | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
1200V,25AFieldStopTrenchIGBT | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
LowLossIGBTinTrenchStop?andFieldstoptechnology LowLossIGBTinTrenchStop?andFieldstoptechnology ?Shortcircuitwithstandtime–10μs ?Designedfor: -FrequencyConverters -UninterruptedPowerSupply ?TrenchStop? andFieldstoptechnologyfor1200Vapplications offers: -verytightparameterdistribution -highruggedne | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LowLossIGBTinTrenchStop?andFieldstoptechnology LowLossIGBTinTrenchStop?andFieldstoptechnology ?Shortcircuitwithstandtime–10μs ?Designedfor: -FrequencyConverters -UninterruptedPowerSupply ?TrenchStop? andFieldstoptechnologyfor1200Vapplications offers: -verytightparameterdistribution -highruggedne | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LowLossIGBTinTrenchandFieldstoptechnology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LowLossDuoPack:IGBTinTrenchStop?andFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmConHEdiode | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
TRENCHSTOPSERIES LowLossDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmConHEdiode ?Approx.1.0VreducedVCE(sat)and0.5VreducedVFcomparedtoBUP314D ?Shortcircuitwithstandtime–10μs ?Designedfor: -FrequencyConverters -UninterruptedPower | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
TRENCHSTOPSERIES LowLossDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmConHEdiode ?Approx.1.0VreducedVCE(sat)and0.5VreducedVFcomparedtoBUP314D ?Shortcircuitwithstandtime–10μs ?Designedfor: -FrequencyConverters -UninterruptedPower | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HighspeedFieldstopTrenchIGBT | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
HighspeedFieldstopTrenchIGBT | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
InductorsforStandardCircuitsWoundFerrite OverviewoftheNLVSeries FEATURES ?Resinmoldtypewoundinductorforstandardcircuits. ?0.01to470μH,E-12Series,widelineupcompatiblewithJ(±5)tolerance,canbeusedforapplicationsthatneedtomeetstrictLtolerancesuchasfiltercircuits. ?Hasexcellentinductancetemperat | TDKTDK Corporation TDK株式會社東電化（中國）投資有限公司 | TDK |
詳細(xì)參數(shù)
- 型號：
SIGC25T120C
- 制造商：
INFINEON
- 制造商全稱：
Infineon Technologies AG
- 功能描述：
IGBT Chip in NPT-technology
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
INFINEON |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價 | ||
INFINEON/英飛凌 |
22+ |
N/A |
15000 |
英飛凌MOS管、IGBT大量有貨 |
詢價 | ||
INFINEON |
23+ |
1 |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
INFINEON |
23+ |
1 |
7000 |
詢價 | |||
INFINEON/英飛凌 |
22+ |
N/A |
9000 |
專業(yè)配單,原裝正品假一罰十,代理渠道價格優(yōu) |
詢價 | ||
INFINEON/英飛凌 |
2021+ |
45000 |
十年專營原裝現(xiàn)貨,假一賠十 |
詢價 |
相關(guān)規(guī)格書
更多- SIGC25T120CL
- SIGC25T120CS2
- SIGC25T60SNC
- SIGC28T60
- SIGC32T120R3
- SIGC39T60
- SIGC40T60R3
- SIGC41T120R3L
- SIGC42T120CL
- SIGC42T120CS
- SIGC42T170R2C
- SIGC42T170R3G
- SIGC42T170R3GG
- SIGC42T60SNC
- SIGC54T60R3
- SIGC57T120R3
- SIGC57T120R3L
- SIGC68T170R3
- SIGC81T120R2C
- SIGC81T120R2CS
- SIGC81T60SNC
- SIGC84T120R3 WAF
- SIGC84T120R3LZJ
- SIGEXPTE
- SIGF10-2L
- SIGF32
- SIGF32-L
- SIGN-101
- SIGN17X22E
- SIGN-201
- SIGNALTEK FO 33-984
- SIGNALTEK FO 33-986
- SIH0901-01-LFR
- SIH1005-01-LFR
- SIH1202-01
- SIH1507-01
- SIH1510-01
- SIH1510-02-LFR
- SIHB12N50C-E3
- SIHB12N60E-GE3
- SIHB15N60E
- SIHB16N50C-E3
- SIHB22N60E_14
- SIHB22N60E-GE3
- SIHB22N60S-E3
相關(guān)庫存
更多- SIGC25T120CS
- SIGC25T60NC
- SIGC25T60UN
- SIGC28T60SZJ
- SIGC32T120R3L
- SIGC39T60S
- SIGC41T120R3
- SIGC42T120C
- SIGC42T120CQ
- SIGC42T120CS2
- SIGC42T170R3
- SIGC42T170R3G_08
- SIGC42T60NC
- SIGC42T60UN
- SIGC54T60R3_05
- SIGC57T120R3/INF WAF
- SIGC61T60NC
- SIGC76T60R3
- SIGC81T120R2CL
- SIGC81T60NC
- SIGC84T120R3
- SIGC84T120R3L
- SIGE
- SIGF10
- SIGF10-L
- SIGF32-2L
- SIGMA2
- SIGN-102
- SIGN17X22S
- SIGN-202
- SIGNALTEK FO 33-985
- SIH0901-01
- SIH1005-01
- SIH-10CH-C
- SIH1202-01-LFR
- SIH1507-01-LFR
- SIH1510-02
- SIHB10N40D-GE3
- SIHB12N60E
- SIHB12N65E-GE3
- SIHB15N60E-GE3
- SIHB22N60E
- SIHB22N60E-E3
- SIHB22N60S
- SIHB23N60E-GE3
