浴室小视频午夜国产一区,国产呦玩系列772

首頁(yè) >SIDR220DP>規(guī)格書(shū)列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
SIDR220DP	文件：216.84 Kbytes Page：9 Pages	N-Channel 25 V (D-S) MOSFET FEATURES ?TrenchFET?GenIVpowerMOSFET ?OptimizedQg,Qgd,andQgd/Qgsratioreduces switchingrelatedpowerloss ?Topsidecoolingfeatureprovidesadditional venueforthermaltransfer ?100RgandUIStested ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.v	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
SIDR220DP-T1-GE3	文件：216.84 Kbytes Page：9 Pages	N-Channel 25 V (D-S) MOSFET FEATURES ?TrenchFET?GenIVpowerMOSFET ?OptimizedQg,Qgd,andQgd/Qgsratioreduces switchingrelatedpowerloss ?Topsidecoolingfeatureprovidesadditional venueforthermaltransfer ?100RgandUIStested ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.v	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
SIDR220EP	文件：167.07 Kbytes Page：7 Pages	N-Channel25V(D-S)175?CMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
SIHFD220	文件：1.78249 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
SIHFR220	文件：1.44698 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestr	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
SIHFR220	文件：3.96242 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR220	文件：332.52 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
SIHFR220	文件：816.14 Kbytes Page：13 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR220,SiHFR220) ?Straightlead(IRFU220,SiHFU220) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
SIHFR220T	文件：1.44698 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestr	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
SIHFR220T	文件：3.96242 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR220TL	文件：1.44698 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestr	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
SIHFR220TL	文件：3.96242 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR220TR	文件：1.44698 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestr	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
SIHFR220TR	文件：3.96242 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFU220	文件：1.44698 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestr	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
SIHFU220	文件：3.96242 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFU220	文件：816.14 Kbytes Page：13 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR220,SiHFR220) ?Straightlead(IRFU220,SiHFU220) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
SIHFU220	文件：340.72 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
SK220	文件：249.37 Kbytes Page：2 Pages	2.0AMPSURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS	BYTESONICBytesonic Electronics Co., Ltd. 松浩電子松浩電子股份有限公司	BYTESONIC
SK220	文件：509.69 Kbytes Page：2 Pages	2.0AMPSURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS	BYTESONICBytesonic Electronics Co., Ltd. 松浩電子松浩電子股份有限公司	BYTESONIC

12 3 >>>

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市振宏微科技有限公司	SIDR220DP-T1-RE3	SILICONIX (VISHAY)	23+	原廠原封	50	訂貨1周原裝正品	詢(xún)價(jià)
深圳市高捷芯城科技有限公司	SIDR220DP-T1-GE3	VISHAY(威世)	23+	PowerPAKSO8DC	7350	現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!	詢(xún)價(jià)
深圳市凌旭科技有限公司	SIDR390DP-T1-GE3	SILICONIXVISHAY	21+	NA	3000	只做原裝,一定有貨,不止網(wǎng)上數(shù)量,量多可訂貨!	詢(xún)價(jià)
深圳市鵬順微電子科技有限公司	SIDR390DP-T1-GE3	Vishay Siliconix	2022+	PowerPAK? SO-8	38550	全新原裝支持表配單中國(guó)著名電子元器件獨(dú)立分銷(xiāo)	詢(xún)價(jià)
中科航電（深圳）電子集團(tuán)有限公司	SIDR390DP-T1-GE3	SILICONIXVISHAY		N/A	90000	集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)	詢(xún)價(jià)
深圳市正納電子有限公司	SIDR390DP-T1-GE3	Vishay	NEW-	MOSFETs	100000	Trans MOSFET N-CH 30V 69.9A 8-Pin PowerPAK SO EP T	詢(xún)價(jià)
深圳市富芯拓展電子有限公司	SIDR390DP-T1-GE3	VISHAY	21+	POWERPAK	1248	全新原裝只做自己庫(kù)存只做原裝	詢(xún)價(jià)
深圳市得捷芯城科技有限公司	SIDR392DP-T1-GE3	Vishay(威世)	23+	NA/	8735	原廠直銷(xiāo),現(xiàn)貨供應(yīng),賬期支持!	詢(xún)價(jià)
現(xiàn)代芯城（深圳）科技有限公司	SIDR392DP-T1-GE3		24+	N/A	82000	一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇	詢(xún)價(jià)
深圳市威爾健半導(dǎo)體有限公司	SiDR402DP	VISHAY/威世	23+	PowerPAKSO-8	69820	終端可以免費(fèi)供樣,支持BOM配單!	詢(xún)價(jià)

更多SIDR220DP供應(yīng)商更新時(shí)間2025-1-13 17:02:00

相關(guān)規(guī)格書(shū)

相關(guān)庫(kù)存