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SGH23N60UFDTU

High Input Impedance

GeneralDescription FairchildsInsulatedGateBipolarTransistor(IGBT)UFDseriesprovideslowconductionandswitchinglosses. UFDseriesisdesignedfortheapplicationssuchasmotorcontrolandgeneralinverterswhereHighSpeedSwitchingisrequired. Features ?HighSpeedSwitching ?Low

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGH23N60UFDTU

包裝:管件 封裝/外殼:TO-3P-3,SC-65-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 23A 100W TO3P

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

SGP23N60UF

Ultra-FastIGBT

GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features ?Highspeedswi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGP23N60UFD

Ultra-FastIGBT

GeneralDescription FairchildsUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses. TheUFDseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features ?Highspeed

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGP23N60UFTU

LowSaturationVoltage:VCE(sat)=2.1V@IC=12A

GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features ?Highspeedswi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGS23N60UF

Ultra-FastIGBT

GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features ?Highspeedswi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGS23N60UFD

Highspeedswitching

GeneralDescription FairchildsUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFDseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features ?Highspeeds

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGS23N60UFD

Ultra-FastIGBT

GeneralDescription FairchildsUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFDseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features ?Highspeeds

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGS23N60UFDTU

Highspeedswitching

GeneralDescription FairchildsUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFDseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features ?Highspeeds

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGW23N60UF

Ultra-FastIGBT

GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features ?Highspeedswi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGW23N60UFD

Ultra-FastIGBT

GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features ?Highspeedswi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SIHB23N60E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHB23N60E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SIHF23N60E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SIHF23N60E

Reducedswitchingandconductionlosses

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF23N60E

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHG23N60E

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHG23N60E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SIHG23N60E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHP23N60E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    SGH23N60UFDTU

  • 制造商:

    onsemi

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝:

    管件

  • 不同?Vge、Ic 時(shí)?Vce(on)(最大值):

    2.6V @ 15V,12A

  • 開關(guān)能量:

    115μJ(開),135μJ(關(guān))

  • 輸入類型:

    標(biāo)準(zhǔn)

  • 25°C 時(shí) Td(開/關(guān))值:

    17ns/60ns

  • 測(cè)試條件:

    300V,12A,23 歐姆,15V

  • 工作溫度:

    -55°C ~ 150°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-3P-3,SC-65-3

  • 供應(yīng)商器件封裝:

    TO-3PN

  • 描述:

    IGBT 600V 23A 100W TO3P

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
ON/安森美
2410+
TO-3P
12000
原裝正品.假一賠百.正規(guī)渠道.原廠追溯.
詢價(jià)
FAIRCHILD
17+
TO-3P
559
全新原裝環(huán)保
詢價(jià)
FAIRCHILD
NA
20000
原裝正品
詢價(jià)
FAIRCHILD
22+
TO-3P
5000
原裝現(xiàn)貨庫存.價(jià)格優(yōu)勢(shì)
詢價(jià)
FSC正品
22+23+
TO-3P
25257
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
詢價(jià)
FAIRCHILD/仙童
24+
TO-3P
400
大批量供應(yīng)優(yōu)勢(shì)庫存熱賣
詢價(jià)
ON
1503+
TO-3P
3000
就找我吧!--邀您體驗(yàn)愉快問購元件!
詢價(jià)
FAIRCHILD
22+
TO247
28600
只做原裝正品現(xiàn)貨假一賠十一級(jí)代理
詢價(jià)
FAIRCHILD仙童
23+
TO-3P
10000
公司只做原裝正品
詢價(jià)
FAIRCHILD/仙童
23+
TO-247
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
更多SGH23N60UFDTU供應(yīng)商 更新時(shí)間2024-10-25 16:11:00