| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
S20S60 | SCHOTTKY BARRIER RECTIFIERS(20A,30-60V) TheD2PAKPowerrectifieremploystheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestate-of-the-artdeviceshavethefollowingfeatures: *LowForwardVoltage. *LowSwitchingnoise. *HighCurrentCapacity *GuaranteeReverseAvalanche. *Guard-RingforStressProtection | MOSPECMospec Semiconductor 統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司 | MOSPEC | |
Schottky Barrier Rectifiers SCHOTTKYBARRIERRECTIFIERS 20AMPERES35-60VOLTS TheI2PAKPowerrectifieremploystheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestate-of-the-artdeviceshavethefollowingfeatures: *LowForwardVoltage. *LowSwitchingnoise. *HighCurrentCapacity | MOSPECMospec Semiconductor 統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司 | MOSPEC | ||
20.0AmpereInsulatedDualCommonCathodeSuperFastRecoveryRectifiers | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半導(dǎo)體思祁半導(dǎo)體有限公司 | THINKISEMI | ||
20.0AmpereInsulatedDualCommonCathodeUltraFastRecoveryRectifiers | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半導(dǎo)體思祁半導(dǎo)體有限公司 | THINKISEMI | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=20A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.199Ω(Max) ?100avalanchetested ?MinimumLot-to-L | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
600V20AaMOSPowerTransistor GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch | AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體 | AOSMD | ||
600V20AaMOSTMPowerTransistor GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch | AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體 | AOSMD | ||
600V20AaMOS GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch | AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體 | AOSMD | ||
iscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-247packaging ?Highspeedswitching ?Veryhighcommutationruggedness ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?PFCstages ?Powersupply ?Switchingapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
600V20AaMOSPowerTransistor GeneralDescription TheAOK20S60hasbeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilitythispartcanbea | AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體 | AOSMD | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=20A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.199Ω(Max) ?100avalanchetested ?MinimumLot-to-L | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
600V20AaMOS GeneralDescription TheAOK20S60hasbeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilitythispartcanbea | AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體 | AOSMD | ||
600V20AaMOSPowerTransistor GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch | AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體 | AOSMD | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.199Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.199Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
600V20AaMOS GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch | AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體 | AOSMD | ||
600V20AaMOS GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch | AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體 | AOSMD | ||
600V20AaMOSPowerTransistor GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch | AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體 | AOSMD | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-Channel650-V(D-S)SuperJunctionMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI |
詳細(xì)參數(shù)
- 型號：
S20S60
- 制造商：
MOSPEC
- 制造商全稱：
Mospec Semiconductor
- 功能描述：
SCHOTTKY BARRIER RECTIFIERS(20A,30-60V)
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
MOSPEC |
23+ |
TO- |
10000 |
公司只做原裝正品 |
詢價 | ||
mospec |
22+ |
TO- |
6000 |
十年配單,只做原裝 |
詢價 | ||
mospec |
22+ |
TO- |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價 | ||
mospec |
24+ |
TO- |
37650 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
MOSPEC |
24+ |
TO-263 |
8866 |
詢價 | |||
MOSPEC |
22+ |
SOT263 |
20000 |
保證原裝正品,假一陪十 |
詢價 | ||
MOSPEC |
22+ |
SOT263 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 |
相關(guān)規(guī)格書
更多- S20S60CR
- S20S70CR
- S20S80CR
- S20SC4M
- S20SC4M-4112
- S20SC4M-7112
- S20SC9M-4100
- S20SC9M-7100
- S20SC9MT
- S20-SP
- S20VT60
- S20VT80
- S20VTA 60
- S20VTA60-5000
- S20VTA80-4000
- S20VTA80-7000
- S20WB20
- S20WB20-5000
- S20WB60
- S21
- S21.7M7.5A
- S-2-1/4
- S-210
- S2100
- S-21003
- S2-100RF1
- S2101
- S-210-13.5
- S-210-24
- S-210-27
- S-210-5
- S2105QE
- S-210-7.5
- S2109
- S210-99-320-30-050000
- S210-A1A1
- S210-A4A1
- S2-10RF2
- S2-10R-T
- S2-10R-XY
- S211
- S-2110
- S211006BK
- S2111
- S-2111A
相關(guān)庫存
更多- S20S70
- S20S80
- S20S90CR
- S20SC4M-4100
- S20SC4M-7100
- S20SC9M
- S20SC9M-4112
- S20SC9M-7112
- S20SCM20
- S20V42AUTOS5D1
- S20VT60-4000
- S20VT80-4000
- S20VTA60
- S20VTA80
- S20VTA80-5000
- S20WB 80
- S20WB20-4000
- S20WB20-7000
- S20WB60-4000
- S21.7M15A
- S-2-1/2
- S210
- S210_Q
- S-21001-0
- S-2100R
- S2-100RJ1
- S-210-12
- S-210-15
- S210250-BLK
- S-210-48
- S2105QA
- S2107
- S2108
- S210-99-308-30-050000
- S210-A1A0
- S210-A3A0
- S2-10R2D8
- S2-10RJ1
- S2-10R-X
- S210-T3
- S2110
- S21100
- S-2110A
- S2111A
- S2112
