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AOB20S60L	文件：330.39 Kbytes Page：7 Pages	600V 20A a MOS TM Power Transistor GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 萬國(guó)半導(dǎo)體美國(guó)萬國(guó)半導(dǎo)體	AOSMD
AOB20S60L	文件：519.87 Kbytes Page：7 Pages	600V 20A a MOS GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 萬國(guó)半導(dǎo)體美國(guó)萬國(guó)半導(dǎo)體	AOSMD
AOK20S60	文件：325.78 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-247packaging ?Highspeedswitching ?Veryhighcommutationruggedness ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?PFCstages ?Powersupply ?Switchingapplications	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
AOK20S60	文件：256.839 Kbytes Page：6 Pages	600V20AaMOSPowerTransistor GeneralDescription TheAOK20S60hasbeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilitythispartcanbea	AOSMDAlpha & Omega Semiconductors 萬國(guó)半導(dǎo)體美國(guó)萬國(guó)半導(dǎo)體	AOSMD
AOK20S60L	文件：453.66 Kbytes Page：6 Pages	600V20AaMOS GeneralDescription TheAOK20S60hasbeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilitythispartcanbea	AOSMDAlpha & Omega Semiconductors 萬國(guó)半導(dǎo)體美國(guó)萬國(guó)半導(dǎo)體	AOSMD
AOK20S60L	文件：422.13 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=20A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.199Ω(Max) ?100avalanchetested ?MinimumLot-to-L	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
AOT20S60	文件：330.4 Kbytes Page：7 Pages	600V20AaMOSPowerTransistor GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 萬國(guó)半導(dǎo)體美國(guó)萬國(guó)半導(dǎo)體	AOSMD
AOT20S60	文件：298.2 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.199Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
AOT20S60L	文件：298.2 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.199Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
AOT20S60L	文件：519.87 Kbytes Page：7 Pages	600V20AaMOS GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 萬國(guó)半導(dǎo)體美國(guó)萬國(guó)半導(dǎo)體	AOSMD
AOTF20S60	文件：519.87 Kbytes Page：7 Pages	600V20AaMOS GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 萬國(guó)半導(dǎo)體美國(guó)萬國(guó)半導(dǎo)體	AOSMD
AOTF20S60	文件：330.4 Kbytes Page：7 Pages	600V20AaMOSPowerTransistor GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 萬國(guó)半導(dǎo)體美國(guó)萬國(guó)半導(dǎo)體	AOSMD
AOTF20S60	文件：296.46 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
AOTF20S60	文件：1.15441 Mbytes Page：11 Pages	N-Channel650-V(D-S)SuperJunctionMOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
AOTF20S60L	文件：296.62 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
AOTF20S60L	文件：519.87 Kbytes Page：7 Pages	600V20AaMOS GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 萬國(guó)半導(dǎo)體美國(guó)萬國(guó)半導(dǎo)體	AOSMD
AOV20S60	文件：77.21 Kbytes Page：1 Pages	DFN8X8PACKAGEMARKINGDESCRIPTION	AOSMDAlpha & Omega Semiconductors 萬國(guó)半導(dǎo)體美國(guó)萬國(guó)半導(dǎo)體	AOSMD
AOW20S60	文件：344.36 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=20A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.199Ω(Max) ?100avalanchetested ?MinimumLot-to-L	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
AOW20S60	文件：284.58 Kbytes Page：6 Pages	600V20AaMOSTMPowerTransistor GeneralDescription TheAOW20S60&AOWF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilityt	AOSMDAlpha & Omega Semiconductors 萬國(guó)半導(dǎo)體美國(guó)萬國(guó)半導(dǎo)體	AOSMD
AOWF20S60	文件：284.58 Kbytes Page：6 Pages	600V20AaMOSTMPowerTransistor GeneralDescription TheAOW20S60&AOWF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilityt	AOSMDAlpha & Omega Semiconductors 萬國(guó)半導(dǎo)體美國(guó)萬國(guó)半導(dǎo)體	AOSMD

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
中天科工半導(dǎo)體（深圳）有限公司	AOB20S60L	Alpha & Omega Semiconductor In	24+	TO-263(D2Pak)	30000	晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品	詢價(jià)
深圳市坤融電子科技有限公司	AOB20S60L	AOS/萬代	24+	TO-263	1600	只做原廠渠道可追溯貨源	詢價(jià)
艾睿國(guó)際（香港）有限公司	AOB20S60L	ALPHAO	2021+	SMD	100500	一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨	詢價(jià)
深圳市百域芯科技有限公司	AOB20S60L	AOS/萬代	21+	TO-263	30000	萬代優(yōu)勢(shì)分銷實(shí)單必成可開增值稅13點(diǎn)	詢價(jià)
深圳市科雨電子有限公司	AOB20S60L	AOS	1809+	TO-263	1675	就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!	詢價(jià)
深圳市維爾達(dá)電子有限公司	AOB20S60L	ALPHA	2023+	TO-263	80000	一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品	詢價(jià)
深圳市國(guó)宇半導(dǎo)體科技有限公司	AOB20S60L	A	23+	TO-263	10000	公司只做原裝正品	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	AOB20S60L	AOS/萬代	23+	TO-263-2	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市安富世紀(jì)電子有限公司	AOB20S60L	AOS/萬代	23+	TO-263	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市易訊博科技有限公司	AOB20S60L	AOS	22+	NA	1583	加我QQ或微信咨詢更多詳細(xì)信息,	詢價(jià)

更多AOB20S60L供應(yīng)商更新時(shí)間2025-1-14 10:12:00

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