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1SMA14AT3G

Marking:RH;The 1SMA5.0AT3G series is designed to protect voltage sensitive components from high voltage

Description The1SMA5.0AT3Gseriesisdesignedtoprotectvoltagesensitivecomponentsfromhighvoltage,highenergytransients.Theyhaveexcellentclampingcapability,highsurgecapability,lowzenerimpedanceandfastresponsetime.The1SMA5.0AT3GseriesissuppliedintheLittelfuseexclus

Littelfuselittelfuse

力特力特公司

1SMA14AT3G

Marking:RH;Package:SMA;400 Watt Peak Power Zener Transient Voltage Suppressors

400WattPeakPowerZenerTransientVoltageSuppressors Unidirectional TheSMAseriesisdesignedtoprotectvoltagesensitivecomponentsfromhighvoltage,highenergytransients.Theyhaveexcellentclampingcapability,highsurgecapability,lowzenerimpedanceandfastresponsetime.TheSMA

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1SMA14AT3G

Marking:RH;Package:SMA;400 Watt Peak Power Zener Transient Voltage Suppressors

400WattPeakPowerZenerTransientVoltageSuppressors Unidirectional* TheSMAseriesisdesignedtoprotectvoltagesensitivecomponentsfromhighvoltage,highenergytransients.Theyhaveexcellentclampingcapability,highsurgecapability,lowzenerimpedanceandfastresponsetime.TheSM

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1SMA14AT3G

Marking:RH;Package:SMA;400 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional

400WattPeakPowerZenerTransientVoltageSuppressors Unidirectional TheSMAseriesisdesignedtoprotectvoltagesensitivecomponentsfromhighvoltage,highenergytransients.Theyhaveexcellentclampingcapability,highsurgecapability,lowzenerimpedanceandfastresponsetime.TheSMA

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1SMA60

Marking:RH;SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

Features ●GlassPassivatedDieConstruction ●Uni-andBi-DirectionalVersionsAvailable ●ExcellentClampingCapability ●FastResponseTime ●PlasticMaterial:ULFlammabilityClassificationRating94V-0

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

2SC3357A

Marking:RH;Package:SOT-89;NPN SILICON RF TRANSISTOR

Feature Highgain:︱S21e︱2TYP.Valueis10dB@VCE=10V,IC=20mA,f=1GHz Lownoise:NFTYP.Valueis1.7dB@VCE=10V,IC=7mA,f=1GHz fT(TYP.):TYP.Valueis6.5GHz@VCE=10V,IC=20mA,f=1GHz

SKTECHNOLGYSHIKE Electronics

時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司

BD5347

Marking:RH;Package:SSOP5;Free Delay Time Setting CMOS Voltage Detector IC Series

Description ROHM’sBD52□□G/FVEandBD53□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

BD5347FVE

Marking:RH;Package:VSOF5;Free Delay Time Setting CMOS Voltage Detector IC Series

Description ROHM’sBD52□□G/FVEandBD53□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

BD5347FVE

Marking:RH;Package:VSOF5;Free Delay Time Setting CMOS Voltage Detector IC Series

Description ROHM’sBD52□□G/FVEandBD53□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

BD5347FVE-TR

Marking:RH;Package:VSOF5;Delay time controlled by extemal capacitor

Description ROHM’sBD52□□G/FVEandBD53□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào):

    RH

  • 制造商:

    Sanken Electric Co Ltd

  • 功能描述:

    DIODE FAST 600V 0.6A AXIAL

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加我QQ或微信咨詢更多詳細(xì)信息,
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優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票
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更多RH供應(yīng)商 更新時(shí)間2025-3-6 15:22:00