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RFP12N08L中文資料新澤西半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

RFP12N08L
廠商型號(hào)

RFP12N08L

功能描述

N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

文件大小

101.13 Kbytes

頁(yè)面數(shù)量

2 頁(yè)

生產(chǎn)廠商 New Jersey Semi-Conductor Products, Inc.
企業(yè)簡(jiǎn)稱

NJSEMI新澤西半導(dǎo)體

中文名稱

新澤西半導(dǎo)體產(chǎn)品股份有限公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-24 16:57:00

RFP12N08L規(guī)格書詳情

The RFM12N08L and RFM12N10L and the RFP12N08L and RFP12N10L are n-channel enhancement-mode silicon-gate power field-effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3-5 volt range, thereby facilitating true on-off power control directly from logic circuit supply voltages

Features:

■ Design optimized tor5 volt gate drive

■ Can be driven directly from Q-MOS, N-MOS, TTL Circuits

■ Compatible with automotive drive requirements

■ SOA is power-dissipation limited

■ Nanosecond switching speeds

■ Linear transfer characteristics

■ High input impedance

■ Majority carrier device

產(chǎn)品屬性

  • 型號(hào):

    RFP12N08L

  • 功能描述:

    TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 12A I(D) | TO-220AB

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
INTERSIL/FSC
23+
TO-220
28610
詢價(jià)
INTERSIL
22+23+
TO-220
23150
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
詢價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
FAIRCHILDONSEMICONDUCTOR
23+
NA
12730
原裝正品代理渠道價(jià)格優(yōu)勢(shì)
詢價(jià)
INTERSIL
17+
TO-220
6200
詢價(jià)
HAR
24+
N/A
4500
詢價(jià)
Intersi
21+
TO-220
12588
原裝正品,自己庫(kù)存 假一罰十
詢價(jià)
INTERSIL
23+
TO-220
5000
原裝正品,假一罰十
詢價(jià)
FAIRCHI
2020+
TO-220
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
三年內(nèi)
1983
只做原裝正品
詢價(jià)