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RFP12N06RLE中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書
RFP12N06RLE規(guī)格書詳情
These N-Channel logic level ESD protected power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor drivers, relay drivers, and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages.
Features
? 12A, 60V
? rDS(ON) = 0.135?
? Electrostatic Discharge Protected
? UIS Rating Curve (Single Pulse)
? Design Optimized for 5V Gate Drive
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
產(chǎn)品屬性
- 型號(hào):
RFP12N06RLE
- 制造商:
Rochester Electronics LLC
- 功能描述:
- Bulk
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
HARRIS/哈里斯 |
23+ |
NA/ |
75 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價(jià) | ||
HARRIS |
23+ |
TO220/ |
20000 |
全新原裝假一賠十 |
詢價(jià) | ||
INTERSIL/FSC |
23+ |
TO-220 |
28610 |
詢價(jià) | |||
HARRIS(哈利斯) |
20+ |
TO-220 |
3000 |
詢價(jià) | |||
FAIRCHILD |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
HARRIS |
TO-220 |
699839 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價(jià) | |||
HAR |
23+ |
RFP12N06RLE |
13528 |
振宏微原裝正品,假一罰百 |
詢價(jià) | ||
24+ |
N/A |
3600 |
詢價(jià) | ||||
INTERSIL |
17+ |
TO-220 |
6200 |
詢價(jià) | |||
F |
22+ |
TO220AB |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) |