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PP100T120-ND

3-Phase POW-R-PAK IGBT Assembly 100 Amperes/1200 Volts

Description: ThePowerexPOW-R-PAK?isaconfigurableIGBTbasedpowerassemblythatmaybeusedasaconverter,chopper,halforfullbridge,orthreephaseinverterformotorcontrol,powersupply,UPSorotherpowerconversionapplications. Features: □HighperformanceIGBTinverterbridge

POWEREX

Powerex Power Semiconductors

FGY100T120RWD

IGBT–Power,Co-PAKN-Channel,FieldStopVII(FS7),SCR,PowerTO247-3L,1200V,1.4V,100A

Description Usingthenovelfieldstop7thgenerationIGBTtechnologyandthe Gen7DiodeinTP2473?leadpackage,FGY100T120RWDoffersthe optimumperformancewithlowconductionlossesandgoodswitching controllabilityforahighefficiencyoperationinvariousapplications likemotorcontr

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FGY100T120RWD

IGBT–Power,Co-PAKN-Channel,FieldStopVII(FS7),SCR,PowerTO247-3L,1200V,1.4V,100A

Description Usingthenovelfieldstop7thgenerationIGBTtechnologyandthe Gen7DiodeinTO2473?leadpackage,FGY100T120RWDoffersthe optimumperformancewithlowconductionlossesandgoodswitching controllabilityforahighefficiencyoperationinvariousapplications likemotorcontr

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FGY100T120SWD

IGBT-Power,Co-PAKN-Channel,FieldStopVII(FS7),Non-SCR,TO247-3L1200V,1.7V,100A

Description Usingthenovelfieldstop7thgenerationIGBTtechnologyandthe Gen7DiodeinTO2473?leadpackage,FGY100T120SWDoffersthe optimumperformancewithlowswitchingandconductionlossesfor high?efficiencyoperationsinvariousapplicationslikeSolar,UPS, andESS. Features ?

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FGY100T120SWD

IGBT-Power,Co-PAKN-Channel,FieldStopVII(FS7),Non-SCR,TO247-3L1200V,1.7V,100A

Description Usingthenovelfieldstop7thgenerationIGBTtechnologyandthe Gen7DiodeinTO2473?leadpackage,FGY100T120SWDoffersthe optimumperformancewithlowswitchingandconductionlossesfor high?efficiencyoperationsinvariousapplicationslikeSolar,UPS, andESS. Features ?

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBW100T120PHF

1200VFieldstopHighRuggednessversionIGBTDatasheet

GeneralDescriptions ThisIGBTisproducedusingadvancedMagnachip’sField StopTrenchIGBTTechnology,whichprovideslowVCE(SAT), highswitchingperformanceandexcellentquality. Features ?1200VTrench+Fieldstoptechnology ?Lowswitchinglosses ?Positivetemperaturecoefficient

MGCHIP

MagnaChip Semiconductor.

PMEG100T120ELPE

100V,12AlowleakagecurrentTrenchMEGASchottkybarrierrectifier

1.Generaldescription TrenchMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierencapsulatedin aCFP15B(SOT1289B)powerandflatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?Lowforwardvoltage ?LowQrrandlowIRM ?Lowleakagecu

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PP100T120

POW-R-PAK100A/1200V3phaseIGBTAssembly

Description: ThePowerexPOW-R-PAKTMisaconfigurableIGBTbasedpowerassemblythatmaybeusedasaconverter,chopper,halforfullbridge,orthreephaseinverterformotorcontrol,powersupply,UPSorotherpowerconversionapplications. Features: ■HighperformanceIGBTinverterbridge

POWEREX

Powerex Power Semiconductors

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INTEL
24+
IGBT
172
詢(xún)價(jià)
INTEL
22+
IGDT
2500
強(qiáng)調(diào)現(xiàn)貨,隨時(shí)查詢(xún)!
 詢(xún)價(jià)
INTEL
23+
IGBT
19526
詢(xún)價(jià)
INTEL
1997
IGBT
172
原裝現(xiàn)貨海量庫(kù)存歡迎咨詢(xún)
 詢(xún)價(jià)
TI
23+
SOP2
12000
全新原裝假一賠十
 詢(xún)價(jià)
INTEL
24+
IGDT
2987
只售原裝自家現(xiàn)貨!誠(chéng)信經(jīng)營(yíng)!歡迎來(lái)電!
 詢(xún)價(jià)
INTEL
2023+
IGBT
80000
一級(jí)代理/分銷(xiāo)渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢(xún)價(jià)
INTEL
23+
IGBT
4500
全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷(xiāo)售!
 詢(xún)價(jià)
INTEL/英特爾
22+
IGDT
50000
只做原裝正品,假一罰十,歡迎咨詢(xún)
 詢(xún)價(jià)
2023+
5800
進(jìn)口原裝,現(xiàn)貨熱賣(mài)
 詢(xún)價(jià)
更多PP100T120-ND供應(yīng)商 更新時(shí)間2025-1-21 15:30:00

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