首頁 >PHB100N03LT>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
PHB100N03LT | N-channel enhancement mode field-effect transistor Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?1technology. Features ■TrenchMOS?technology ■Lowon-stateresistance ■Avalancheruggednessrated ■Logiclevelcompatible ■Surfacemountpackage. Applications ■DCtoDCconverters ■ | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | |
PHB100N03LT | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | |
Switching(30V,10A) Features 1)LowQg. 2)Lowon-resistance. 3)Exellentresistancetodamagefromstaticelectric Structure SiliconN-channel MOSFET | ROHMRohm 羅姆羅姆半導體集團 | ROHM | ||
N-Channel20V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
4VDriveNchMOSFET 4VDriveNchMOSFET Features 1)Lowon-resistance. 2)Built-inG-SProtectionDiode. 3)SmallSurfaceMountPackage(SOP8). Application Powerswitching,DC/DCconverter. | ROHMRohm 羅姆羅姆半導體集團 | ROHM | ||
Switching(30V,?10A) Switching(30V,±10A) Features 1)Lowon-resistance. 2)Built-inG-SProtectionDiode. 3)SmallandSurfaceMountPackage(SOP8). Applications Powerswitching,DC/DCconverter. | ROHMRohm 羅姆羅姆半導體集團 | ROHM | ||
Nch30V10APowerMOSFET | ROHMRohm 羅姆羅姆半導體集團 | ROHM | ||
Nch30V10APowerMOSFET | ROHMRohm 羅姆羅姆半導體集團 | ROHM | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
4VDriveNchMOSFET 4VDriveNchMOSFET Features 1)Lowon-resistance. 2)Built-inG-SProtectionDiode. 3)SmallSurfaceMountPackage(SOP8). Application Switching | ROHMRohm 羅姆羅姆半導體集團 | ROHM | ||
N-CHANNEL30V-0.0045??-80A-DPAK-IPAKPlanarSTripFET??MOSFET Description ThisMOSFETisthelatestrefinementofSTMicroelectronicunique“SingleFeatureSize?”stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristics,lowgatechargeandlesscriticalaligmentstepstherefore | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
N-channelMOSFET GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingSAMWINsemiconductor’sadvancedplanarstripe,DMOStechnologyintendedforbatteryOperatedsystemslikeaDC-DCconvertermotorcontrol,ups,audioamplifier.Also,especiallydesignedtominimizeRDS(ON) | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER | ||
N-channelMOSFET GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingSAMWINsemiconductor’sadvancedplanarstripe,DMOStechnologyintendedforbatteryOperatedsystemslikeaDC-DCconvertermotorcontrol,ups,audioamplifier.Also,especiallydesignedtominimizeRDS(ON) | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER | ||
N-channelMOSFET GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingSAMWINsemiconductor’sadvancedplanarstripe,DMOStechnologyintendedforbatteryOperatedsystemslikeaDC-DCconvertermotorcontrol,ups,audioamplifier.Also,especiallydesignedtominimizeRDS(ON) | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-channelMOSFET GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingSAMWINsemiconductor’sadvancedplanarstripe,DMOStechnologyintendedforbatteryOperatedsystemslikeaDC-DCconvertermotorcontrol,ups,audioamplifier.Also,especiallydesignedtominimizeRDS(ON) | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER | ||
N-channelMOSFET GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingSAMWINsemiconductor’sadvancedplanarstripe,DMOStechnologyintendedforbatteryOperatedsystemslikeaDC-DCconvertermotorcontrol,ups,audioamplifier.Also,especiallydesignedtominimizeRDS(ON) | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET Features ?30V,100A RDSON(typ)=2.9mΩ@VGS=10V RDSON(typ)=4.3mΩ@VGS=4.5V ?AdvancedTrenchTechnology ?ProvideExcellentRDS(ON)andLowGateCharge ?Leadfreeproductisacquired Application ?LoadSwitch ?PWMApplication ?Powermanagement 100UISTESTED! 100ΔVdsTEST | TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓鋒半導體深圳市拓鋒半導體科技有限公司 | TUOFENG | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET ●GeneralDescription TheTF100N03MusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. ●Features Advancedeviceconstructure LowRDS(ON)tominimizeconductionloss LowGateChargeforfastswitching | TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓鋒半導體深圳市拓鋒半導體科技有限公司 | TUOFENG | ||
100A,30VN-CHANNELPOWERMOSFET DESCRIPTION TheUT100N03usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *RDS(ON)=5.3m?@VGS=10V *RDS(ON)=8.0m?@VGS=4.5V | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
PHILIPS/飛利浦 |
24+ |
TO-263 |
20000 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
PHILIPS |
17+ |
TO-263 |
6200 |
詢價 | |||
PHILIPS |
24+ |
TO-263 |
20000 |
詢價 | |||
NXP |
23+ |
TO-263 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
PHILIPS |
2020+ |
TO-263 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
PHILIPS |
24+ |
SOT404(D2PAK) |
16800 |
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!? |
詢價 | ||
PHILIPS |
08+ |
TO-263 |
20000 |
普通 |
詢價 | ||
PHILIPS/飛利浦 |
22+ |
SOT263 |
20000 |
保證原裝正品,假一陪十 |
詢價 | ||
PHILIPS |
21+ |
TO-263 |
30490 |
原裝現(xiàn)貨庫存 |
詢價 | ||
N |
23+ |
SOT404(D |
10000 |
公司只做原裝正品 |
詢價 |
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