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PHB108NQ03LT

TrenchMOS logic level FET

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?technology. Productavailability: PHP108NQ03LTinSOT78(TO-220AB) PHB108NQ03LTinSOT404(D2-PAK) PHD108NQ03LTinSOT428(D-PAK). Features ■Logiclevelcompatible ■

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHB108NQ03LT

N-channel TrenchMOS logic level FET

Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOS?technology. Features ■Logiclevelthreshold ■Verylowon-stateresistance ■Lead-freeconstruction ■Lowgatecharge Applications ■DC-to-DCconve

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PHB108NQ03LT

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·Switch-modePowerSupplies ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHD108NQ03LT

TrenchMOSlogiclevelFET

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?technology. Productavailability: PHP108NQ03LTinSOT78(TO-220AB) PHB108NQ03LTinSOT404(D2-PAK) PHD108NQ03LTinSOT428(D-PAK). Features ■Logiclevelcompatible ■

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHD108NQ03LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·Switch-modePowerSupplies ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHD108NQ03LT

N-channelTrenchMOSlogiclevelFET

Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOS?technology. Features ■Logiclevelthreshold ■Verylowon-stateresistance ■Lead-freeconstruction ■Lowgatecharge Applications ■DC-to-DCconve

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PHD108NQ03LT

N-channelTrenchMOSlogiclevelFET

Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOS?technology. Features ■Logiclevelthreshold ■Verylowon-stateresistance ■Lead-freeconstruction ■Lowgatecharge Applications ■DC-to-DCconve

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PHP108NQ03LT

TrenchMOSlogiclevelFET

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?technology. Productavailability: PHP108NQ03LTinSOT78(TO-220AB) PHB108NQ03LTinSOT404(D2-PAK) PHD108NQ03LTinSOT428(D-PAK). Features ■Logiclevelcompatible ■

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHU108NQ03LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·Switch-modePowerSupplies ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHU108NQ03LT

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

PHU108NQ03LT

N-channelTrenchMOSlogiclevelFET

Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOS?technology. Features ■Logiclevelthreshold ■Verylowon-stateresistance ■Lead-freeconstruction ■Lowgatecharge Applications ■DC-to-DCconve

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號：

    PHB108NQ03LT

  • 制造商：

    PHILIPS

  • 制造商全稱：

    NXP Semiconductors

  • 功能描述：

    TrenchMOS logic level FET

供應(yīng)商型號品牌批號封裝庫存備注價格
NXP(恩智浦)
23+
標(biāo)準(zhǔn)封裝
12048
全新原裝正品/價格優(yōu)惠/質(zhì)量保障
 詢價
PHILIPS/飛利浦
24+
TO-263
3200
只做原廠渠道 可追溯貨源
 詢價
NXP/恩智浦
24+
TO-263
504475
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價
PH
24+
SOT404TO-263D2PAK
8866
詢價
PHI
23+
TO-263
8890
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價
NXP
16+
NA
8800
誠信經(jīng)營
 詢價
PHILIPS
22+
TO263
5000
全新原裝現(xiàn)貨!自家?guī)齑?
 詢價
NXP
23+
TO-263
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
PHILIPS
23+
NA
32354
專做原裝正品,假一罰百!
 詢價
PHI
22+23+
TO-263
28901
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價
更多PHB108NQ03LT供應(yīng)商 更新時間2025-1-6 14:40:00

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