NTH4L030N120M3S

絲?。?a target="_blank" title="Marking" href="/h4l030120m3s/marking.html">H4L030120M3S；Package：TO-247-4L；Silicon Carbide (SiC) MOSFET – EliteSiC, 29 mohm, 1200V, M3S, TO-247-4L

Features ?Typ.RDS(on)=29m@VGS=18V ?UltraLowGateCharge(QG(tot)=107nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=106pF) ?100AvalancheTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typical

NTH4L030N120M3S

Silicon Carbide (SiC) MOSFET – EliteSiC,?29 mohm, 1200 V, M3S, TO-247-4L; ? TO-247-4L Package with Kelvin source configuration\n? Excellent FOM [ = Rdson * Eoss ]\n? Ultra Low Gate Charge (QG(tot) = 107 nC)\n? High Speed Switching with Low Capacitance (Coss = 106 pF)\n? 15V to 18V Gate Drive\n? New M3S technology: 29 mohm RDS(ON) with low Eon and Eoff losses\n? 100% Avalanche Tested\n? Halide Free and RoHS Compliant\n\n;

The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.?\n\n

NVH4L030N120M3S

SiliconCarbide(SiC)MOSFET–EliteSiC,29mohm,1200V,M3S,TO-247-4L

Features ?Typ.RDS(on)=29m@VGS=18V ?UltraLowGateCharge(QG(tot)=107nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=106pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(on