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NTH4L015N065SC1

Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-4L

Features ?Typ.RDS(on)=12m@VGS=18V Typ.RDS(on)=15m@VGS=15V ?UltraLowGateCharge(QG(tot)=283nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=430pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Fr

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L015N065SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 12mohm, 650 V, M2, TO-247-4L

Features ?Typ.RDS(on)=12m@VGS=18V Typ.RDS(on)=15m@VGS=15V ?UltraLowGateCharge(QG(tot)=283nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=430pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Fr

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L015N065SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, TO-247-4L; ? High Junction Temperature\n? Tj = 175C\n? 100% UIL Tested\n? RoHS Compliant\n? High Speed Switching and Low Capacitance\n? 650V rated\n;

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L015N065SC1

MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 12 m, 142 A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L015N065SC1_V01

Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-4L

Features ?Typ.RDS(on)=12m@VGS=18V Typ.RDS(on)=15m@VGS=15V ?UltraLowGateCharge(QG(tot)=283nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=430pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Fr

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L015N065SC1_V02

Silicon Carbide (SiC) MOSFET – EliteSiC, 12mohm, 650 V, M2, TO-247-4L

Features ?Typ.RDS(on)=12m@VGS=18V Typ.RDS(on)=15m@VGS=15V ?UltraLowGateCharge(QG(tot)=283nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=430pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Fr

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

技術(shù)參數(shù)

  • Pb-free：

    Pb

  • AEC Qualified：

    A

  • Halide free：

    H

  • PPAP Capablee：

    P

  • Status：

    Active

  • Channel Polarity：

    N-Channel

  • Configuration：

    Single

  • Blocking Voltage BVDSS (V)：

    650

  • ID(max) (A)：

    164

  • RDS(on) Typ @ 25°C (mΩ)：

    15.6

  • Qg Total (C)：

    251

  • Output Capacitance (C)：

    397

  • Tj Max (°C)：

    175

  • Package Type：

    TO-247-4

供應(yīng)商型號品牌批號封裝庫存備注價格
onsemi(安森美)
24+
TO-247-4
7814
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
ON
24+
NA
3000
進口原裝 假一罰十 現(xiàn)貨
 詢價
ON
23+
原廠原封
450
訂貨1周 原裝正品
 詢價
ON/安森美
22+
24000
原裝正品現(xiàn)貨,實單可談,量大價優(yōu)
 詢價
ON
22+
NA
1056
原裝正品支持實單
 詢價
ON
23+
MOSFET
5864
原裝原標(biāo)原盒 給價就出 全網(wǎng)最低
 詢價
onsemi(安森美)
2025+
TO-247-4L
55740
詢價
onsemi
21+
775
只做原裝,優(yōu)勢渠道 ,歡迎實單聯(lián)系
 詢價
onsemi
23+
TO-247-4L
1356
原廠正品現(xiàn)貨SiC MOSFET全系列
 詢價
24+
N/A
60000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
更多NTH4L015N065SC1供應(yīng)商 更新時間2025-7-29 16:12:00

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