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NTH4L015N065SC1

Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-4L

Features ?Typ.RDS(on)=12m@VGS=18V Typ.RDS(on)=15m@VGS=15V ?UltraLowGateCharge(QG(tot)=283nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=430pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Fr

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L015N065SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 12mohm, 650 V, M2, TO-247-4L

Features ?Typ.RDS(on)=12m@VGS=18V Typ.RDS(on)=15m@VGS=15V ?UltraLowGateCharge(QG(tot)=283nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=430pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Fr

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L015N065SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, TO-247-4L; ? High Junction Temperature\n? Tj = 175C\n? 100% UIL Tested\n? RoHS Compliant\n? High Speed Switching and Low Capacitance\n? 650V rated\n;

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L015N065SC1

MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 12 m, 142 A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L015N065SC1_V01

Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-4L

Features ?Typ.RDS(on)=12m@VGS=18V Typ.RDS(on)=15m@VGS=15V ?UltraLowGateCharge(QG(tot)=283nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=430pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Fr

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L015N065SC1_V02

Silicon Carbide (SiC) MOSFET – EliteSiC, 12mohm, 650 V, M2, TO-247-4L

Features ?Typ.RDS(on)=12m@VGS=18V Typ.RDS(on)=15m@VGS=15V ?UltraLowGateCharge(QG(tot)=283nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=430pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Fr

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

技術(shù)參數(shù)

  • Pb-free：

    Pb

  • AEC Qualified：

    A

  • Halide free：

    H

  • PPAP Capablee：

    P

  • Status：

    Active

  • Channel Polarity：

    N-Channel

  • Configuration：

    Single

  • Blocking Voltage BVDSS (V)：

    650

  • ID(max) (A)：

    164

  • RDS(on) Typ @ 25°C (mΩ)：

    15.6

  • Qg Total (C)：

    251

  • Output Capacitance (C)：

    397

  • Tj Max (°C)：

    175

  • Package Type：

    TO-247-4

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
onsemi(安森美)
24+
TO-247-4
7814
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
 詢價(jià)
ON
24+
NA
3000
進(jìn)口原裝 假一罰十 現(xiàn)貨
 詢價(jià)
ON
23+
原廠原封
450
訂貨1周 原裝正品
 詢價(jià)
ON/安森美
22+
24000
原裝正品現(xiàn)貨,實(shí)單可談,量大價(jià)優(yōu)
 詢價(jià)
ON
22+
NA
1056
原裝正品支持實(shí)單
 詢價(jià)
ON
23+
MOSFET
5864
原裝原標(biāo)原盒 給價(jià)就出 全網(wǎng)最低
 詢價(jià)
onsemi(安森美)
2025+
TO-247-4L
55740
詢價(jià)
onsemi
21+
775
只做原裝,優(yōu)勢(shì)渠道 ,歡迎實(shí)單聯(lián)系
 詢價(jià)
onsemi
23+
TO-247-4L
1356
原廠正品現(xiàn)貨SiC MOSFET全系列
 詢價(jià)
24+
N/A
60000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
更多NTH4L015N065SC1供應(yīng)商 更新時(shí)間2025-7-28 16:12:00

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