NSBC114EDXV6分立半導(dǎo)體產(chǎn)品的晶體管-雙極（BJT）-陣列-預(yù)偏置規(guī)格書PDF中文資料

NSBC114EDXV6屬于分立半導(dǎo)體產(chǎn)品的晶體管-雙極（BJT）-陣列-預(yù)偏置。由安森美半導(dǎo)體公司制造生產(chǎn)的NSBC114EDXV6晶體管 - 雙極（BJT）- 陣列 - 預(yù)偏置預(yù)偏置的雙極晶體管陣列包含兩個(gè)或更多雙極晶體管，同時(shí)電阻以可能有用的方式連接到每個(gè)晶體管；通常在每個(gè)晶體管的發(fā)射極和基極端子之間有一個(gè)電阻，同時(shí)有另一個(gè)電阻連接到每個(gè)晶體管的基極端子和器件封裝上的用戶可訪問引腳。

Dual NPN Bias Resistor Transistors R1 = 10 kΩ, R2 = 10 kΩ

NPN Transistors with Monolithic Bias Resistor Network

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Features

? Simplifies Circuit Design

? Reduces Board Space

? Reduces Component Count

? S and NSV Prefix for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC-Q101 Qualified and PPAP Capable*

? These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant