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NP80N055CLE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=11mΩMAX.(VGS=10V,ID=40A) RDS(on)2=13mΩMAX.(VGS=5V,ID=4

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP80N055CLE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=11mΩMAX.(VGS=10V,ID=40A) RDS(on)2=13mΩMAX.(VGS=5V,ID=40A) RDS(on)3=15mΩMAX.(VGS=4.5V,ID=40A) ?Lowinputcapacitance Ciss=2900

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N055CLE

SWITCHING N-CHANNEL POWER MOS FET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP80N055CLE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP80N055CLE-S12-AZ

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=11mΩMAX.(VGS=10V,ID=40A) RDS(on)2=13mΩMAX.(VGS=5V,ID=4

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP80N055CLE-S12-AZ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=11mΩMAX.(VGS=10V,ID=40A) RDS(on)2=13mΩMAX.(VGS=5V,ID=40A) RDS(on)3=15mΩMAX.(VGS=4.5V,ID=40A) ?Lowinputcapacitance Ciss=2900

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N055CLE-S12-AZ

SWITCHING N-CHANNEL POWER MOS FET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP80N055DHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=11mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2400pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N055DHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=11mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2400pFT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP80N055DLE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=11mΩMAX.(VGS=10V,ID=40A) RDS(on)2=13mΩMAX.(VGS=5V,ID=4

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào)：

    NP80N055CLE

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
NEC
24+
TO-220AB
8866
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NEC
23+
TO-252
9500
專業(yè)優(yōu)勢供應(yīng)
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NEC
6000
面議
19
TO-220AB
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VBSEMI/臺(tái)灣微碧
23+
TO-220AB
50000
全新原裝正品現(xiàn)貨,支持訂貨
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VBsemi
23+
TO220
50000
全新原裝正品現(xiàn)貨,支持訂貨
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VB
21+
TO-220AB
10000
原裝現(xiàn)貨假一罰十
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NEC
2022+
TO-220AB
12888
原廠代理 終端免費(fèi)提供樣品
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NEC
23+
TO-220AB
33000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
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NEC
23+
TO-220
6000
原裝正品，支持實(shí)單
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VBsemi
21+
TO220
10026
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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更多NP80N055CLE供應(yīng)商 更新時(shí)間2025-2-21 15:30:00

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