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NP160N04TUK

MOS FIELD EFFECT TRANSISTOR

Features ?Superlowon-stateresistance RDS(on)=1.5m?MAX.(VGS=10V,ID=80A) ?LowCissCiss=7200pFTYP.(VDS=25V) ?DesignedforautomotiveapplicationandAEC-Q101qualified

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP160N04TUK_V01

MOS FIELD EFFECT TRANSISTOR

Features ?Superlowon-stateresistance RDS(on)=1.5m?MAX.(VGS=10V,ID=80A) ?LowCissCiss=7200pFTYP.(VDS=25V) ?DesignedforautomotiveapplicationandAEC-Q101qualified

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP160N04TUK-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP160N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=1.5mΩMAX.(VGS=10V,ID=80A) ?LowCiss:Ciss=7200pFTYP.(VDS=25V) ?Designedforautomotiveapplicat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP160N04TUK-E1-AY

MOS FIELD EFFECT TRANSISTOR

Features ?Superlowon-stateresistance RDS(on)=1.5m?MAX.(VGS=10V,ID=80A) ?LowCissCiss=7200pFTYP.(VDS=25V) ?DesignedforautomotiveapplicationandAEC-Q101qualified

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP160N04TUK-E2-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP160N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=1.5mΩMAX.(VGS=10V,ID=80A) ?LowCiss:Ciss=7200pFTYP.(VDS=25V) ?Designedforautomotiveapplicat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP160N04TUK-E2-AY

MOS FIELD EFFECT TRANSISTOR

Features ?Superlowon-stateresistance RDS(on)=1.5m?MAX.(VGS=10V,ID=80A) ?LowCissCiss=7200pFTYP.(VDS=25V) ?DesignedforautomotiveapplicationandAEC-Q101qualified

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP160N055TUJ

MOS FIELD EFFECT TRANSISTOR

Description TheNP160N055TUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance ?RDS(on)=3.0mΩMAX.(VGS=10V,ID=80A) ?LowCiss:Ciss=6900pFTYP.(VDS=25V,VGS=0V) ?Designedforautomotiveappl

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP160N055TUJ-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP160N055TUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance ?RDS(on)=3.0mΩMAX.(VGS=10V,ID=80A) ?LowCiss:Ciss=6900pFTYP.(VDS=25V,VGS=0V) ?Designedforautomotiveappl

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP160N055TUJ-E2-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP160N055TUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance ?RDS(on)=3.0mΩMAX.(VGS=10V,ID=80A) ?LowCiss:Ciss=6900pFTYP.(VDS=25V,VGS=0V) ?Designedforautomotiveappl

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP160N055TUK

MOS FIELD EFFECT TRANSISTOR

Description TheNP160N055TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ●Superlowon-stateresistance RDS(on)=2.10mΩMAX.(VGS=10V,ID=80A) ●LowCiss:Ciss=7500pFTYP.(VDS=25V) ●Designedforautomotiveapplicatio

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    NP16

  • 功能描述：

    16 AMPERE SILICON RECTIFIER

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24+
50
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RENESAS
2020+
TO263-7
20
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ELGENELECTR
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原裝進(jìn)口原廠原包接受訂貨
2500
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NEC
23+
SOT263-7
9365
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NEC
16+
TO263-7
8000
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NEC
2016+
TO263-7
6292
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!
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RENESAS
24+
DFN56
5000
全現(xiàn)原裝公司現(xiàn)貨
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Renesas
1706+
?
7500
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RENESAS
1742+
DFN56
98215
只要網(wǎng)上有絕對(duì)有貨!只做原裝正品!
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NEC
22+
SOT263-7
10000
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更多NP16供應(yīng)商 更新時(shí)間2025-7-7 10:20:00

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