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NP16

16 AMPERE SILICON RECTIFIER

[GENERALINSTRUMENT] 16AMPERESILICONRECTIFIER FEATURES ?PlasticpackagehasUnderwritersLaboratoryFlammbilityClassification94V-O. ?ExceedsEnvironomentalstandardsofMIL-STD-19500. ?Highcurrentcapability ?Highsurgecapacity ?Lowforwardvoltage

ETCList of Unclassifed Manufacturers

未分類制造商

NP160N04TUG

SWITCHING N-CHANNEL POWER MOS FET

FEATURES ?Superlowon-stateresistance RDS(on)=1.6mΩTYP./2.0mΩMAX.(VGS=10V,ID=80A) ?HighCurrentRating ID(DC)=±160A

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP160N04TUG-E1-AY

SWITCHING N-CHANNEL POWER MOS FET

FEATURES ?Superlowon-stateresistance RDS(on)=1.6mΩTYP./2.0mΩMAX.(VGS=10V,ID=80A) ?HighCurrentRating ID(DC)=±160A

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP160N04TUG-E1-AY

MOS FIELD EFFECT TRANSISTOR

FEATURES ?Superlowon-stateresistance RDS(on)=1.6mΩTYP./2.0mΩMAX.(VGS=10V,ID=80A) ?HighCurrentRating ID(DC)=±160A

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP160N04TUG-E2-AY

SWITCHING N-CHANNEL POWER MOS FET

FEATURES ?Superlowon-stateresistance RDS(on)=1.6mΩTYP./2.0mΩMAX.(VGS=10V,ID=80A) ?HighCurrentRating ID(DC)=±160A

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP160N04TUG-E2-AY

MOS FIELD EFFECT TRANSISTOR

FEATURES ?Superlowon-stateresistance RDS(on)=1.6mΩTYP./2.0mΩMAX.(VGS=10V,ID=80A) ?HighCurrentRating ID(DC)=±160A

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP160N04TUJ

MOS FIELD EFFECT TRANSISTOR

Description TheNP160N04TUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance ?RDS(on)=2.0mΩMAX.(VGS=10V,ID=80A) ?LowCiss:Ciss=6900pFTYP.(VDS=25V,VGS=0V) ?Designedforautomotiveappli

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP160N04TUJ-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP160N04TUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance ?RDS(on)=2.0mΩMAX.(VGS=10V,ID=80A) ?LowCiss:Ciss=6900pFTYP.(VDS=25V,VGS=0V) ?Designedforautomotiveappli

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP160N04TUJ-E2-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP160N04TUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance ?RDS(on)=2.0mΩMAX.(VGS=10V,ID=80A) ?LowCiss:Ciss=6900pFTYP.(VDS=25V,VGS=0V) ?Designedforautomotiveappli

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP160N04TUK

MOS FIELD EFFECT TRANSISTOR

Description TheNP160N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=1.5mΩMAX.(VGS=10V,ID=80A) ?LowCiss:Ciss=7200pFTYP.(VDS=25V) ?Designedforautomotiveapplicat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    NP16

  • 功能描述：

    16 AMPERE SILICON RECTIFIER

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
24+
50
詢價(jià)
RENESAS
2020+
TO263-7
20
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢價(jià)
ELGENELECTR
24+
原裝進(jìn)口原廠原包接受訂貨
2500
原裝現(xiàn)貨假一罰十
 詢價(jià)
NEC
23+
SOT263-7
9365
價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來(lái)電查詢
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NEC
16+
TO263-7
8000
原裝現(xiàn)貨請(qǐng)來(lái)電咨詢
 詢價(jià)
NEC
2016+
TO263-7
6292
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價(jià)
RENESAS
24+
DFN56
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價(jià)
Renesas
1706+
?
7500
只做原裝進(jìn)口,假一罰十
 詢價(jià)
RENESAS
1742+
DFN56
98215
只要網(wǎng)上有絕對(duì)有貨!只做原裝正品!
 詢價(jià)
NEC
22+
SOT263-7
10000
只售原裝正品!現(xiàn)貨庫(kù)存!價(jià)格優(yōu)勢(shì)...
 詢價(jià)
更多NP16供應(yīng)商 更新時(shí)間2025-7-6 16:01:00

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