NEM091803S-28中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書

N-CHANNEL SILICON POWER LDMOS FET

FOR 180 W UHF-BAND PUSH-PULL POWER AMPLIFIER

DESCRIPTION

The NEM091803S-28 is an N-channel enhancement-mode lateral diffused MOS FET designed for 0.8 to 1.0 GHz

applications, such as, GSM/EDGE/N-CDMA cellular base station.

FEATURES

? High 1 dB compression output power : PO (1 dB) = 180 W TYP. (VDS = 28 V, IDset = 1 600 mA, f = 880 MHz)

? High linear gain : GL = 18.5 dB TYP. (VDS = 28 V, IDset = 1 600 mA, f = 880 MHz)

? High drain efficiency : ηd = 53 TYP. (VDS = 28 V, IDset = 1 600 mA, f = 880 MHz)

? 3rd order intermodulation distortion : IM3 = ?37 dBc TYP. (VDS = 28 V, IDset = 1 600 mA, f = 880.0, 880.1 MHz,

Pout = 46 dBm (2 tones) )

? Internal matched (Input) for ease of use

? Low cost hollow plastic packages

? 100 screening

? Integrated ESD protection

? Effective prevention against humidity

? Excellent stability against Hot Carrier Injection

APPLICATIONS

? Digital cellular base station PA : GSM/D-AMPS/PDC/N-CDMA etc.

? UHF-band TV-transmitter PA