NEM091203P-28-A中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書

N-CHANNEL SILICON POWER LDMOS FET

FOR 135 W UHF-BAND SINGLE-END POWER AMPLIFIER

DESCRIPTION

The NEM091203P-28 is an N-channel enhancement-mode lateral diffused MOS FET designed for 850 to 960 MHz

applications, such as, GSM/EDGE/N-CDMA cellular base station. Dies are manufactured using our NEWMOS

technology (our WSi gate lateral MOS FET), and its nitride surface passivation and quadruple layer aluminum silicon

metallization offer a high degree of reliability.

FEATURES

? High 1 dB compression output power : PO (1 dB) = 135 W TYP. (VDS = 28 V, IDset = 1 200 mA,

f = 850 to 960 MHz CW)

? High linear gain : GL = 17.0 dB TYP. (VDS = 28 V, IDset = 1 200 mA, f = 850 to 960 MHz CW)

? High drain efficiency : ηd = 58 TYP. (VDS = 28 V, IDset = 1 200 mA, f = 850 to 960 MHz CW)

? Low intermodulation distortion : IM3 = ?40 dBc TYP. (VDS = 28 V, IDset = 1 200 mA, f = 960/960.1 MHz, Pout = 45 dBm (2 tones) )

: IM3 = ?40 dBc TYP. (VDS = 28 V, IDset = 1 200 mA, f = 880/880.1 MHz,

Pout = 45 dBm (2 tones) )

? Internal matched (Input and Output) for ease of use

? Low cost hollow plastic packages

? 100 screening

? Integrated ESD protection

? Effective prevention against humidity

? Excellent stability against HCI (Hot Carrier Injection)