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NE38018

L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET

FEATURES ○SuperLownoisefigure&HighAssociatedGain NF=0.55dBtyp.Ga=14.5dBtyp.OIP3=22dBm(V67),OIP3=23dBm(V68)typ.atf=2GHz NF=0.4dBtyp.Ga=20dBtyp.atf=900MHz 4pinssuperminimoldpackage Wg=800μm

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NE38018

GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)

DESCRIPTION TheNE38018isalowcostgalliumarsenideHetero-JunctionFEThousedinaminiature(SOT-343)plasticsurfacemountpackage.ThedeviceisfabricatedusingionimplantationforimprovedRFandDCperformance,reliability,anduniformity.Itslownoisefigure,highgain,smallsizean

CEL

California Eastern Labs

NE38018

Hetero Junction Field Effect transistor

FEATURES ?SuperLownoisefigure&HighAssociatedGain NF=0.55dBTYP.,Ga=14.5dBTYP.,OIP3=22dBm(V67),OIP3=23dBm(V68)TYP.@f=2GHz NF=0.4dBTYP.,Ga=20dBTYP.@f=900MHz ?4pinssuperminimoldpackage ?Wg=800μm

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE38018

GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NE38018-T1

L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET

FEATURES ○SuperLownoisefigure&HighAssociatedGain NF=0.55dBtyp.Ga=14.5dBtyp.OIP3=22dBm(V67),OIP3=23dBm(V68)typ.atf=2GHz NF=0.4dBtyp.Ga=20dBtyp.atf=900MHz 4pinssuperminimoldpackage Wg=800μm

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NE38018-T1

Hetero Junction Field Effect transistor

FEATURES ?SuperLownoisefigure&HighAssociatedGain NF=0.55dBTYP.,Ga=14.5dBTYP.,OIP3=22dBm(V67),OIP3=23dBm(V68)TYP.@f=2GHz NF=0.4dBTYP.,Ga=20dBTYP.@f=900MHz ?4pinssuperminimoldpackage ?Wg=800μm

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE38018-T2

L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET

FEATURES ○SuperLownoisefigure&HighAssociatedGain NF=0.55dBtyp.Ga=14.5dBtyp.OIP3=22dBm(V67),OIP3=23dBm(V68)typ.atf=2GHz NF=0.4dBtyp.Ga=20dBtyp.atf=900MHz 4pinssuperminimoldpackage Wg=800μm

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NE38018_00

GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NE38018-TI-67

GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NE38018-TI-68

GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細(xì)參數(shù)

  • 型號:

    NE38018

  • 功能描述:

    MOSFET L-S Band Lo No Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
24+
3000
公司存貨
詢價
SOT-343
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
詢價
RENESAS
23+
SOT-343
63000
原裝正品現(xiàn)貨
詢價
NEC
6000
面議
19
DIP/SMD
詢價
NEC
2020+
SOT-23-
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價
RENESAS/NEC
23+
SOT-343
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
NEC
23+
SOT-343
26000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
NEC
22+
SOT-343
3000
原裝正品,支持實(shí)單
詢價
NEC
SOT-23-4
699839
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
詢價
NEC
2023+
SOT-343
5800
進(jìn)口原裝,現(xiàn)貨熱賣
詢價
更多NE38018供應(yīng)商 更新時間2025-1-29 16:00:00