零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
NAS6618 | NATIONAL AEROSPACE STANDARD | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | |
NAS6618 | BOLT, HEX HEAD, CLOSE TOLERANCE, ALLOY STEEL SHORT THREAD | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | |
CMOSLOWDROPOUTREGULATOR(LDO)600mAADJUSTABLE,ULTRA-LOWNOISE,ULTRA-FAST DESCRIPTION A6618 seriesisagroupofpositivevoltageoutput, lowpowerconsumption,lowdropoutvoltage regulator. A6618 canprovideoutputvalueadjustablefrom0.8V to5.0V. A6618 includeshighaccuracyvoltagereference, erroramplifier,currentlimitcircuitandoutputdriver mod | AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技 | AITSEMI | ||
LowOn-resistance,FastSwitchingCharacteristic | A-POWERAdvanced Power Electronics Corp. 富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司 | A-POWER | ||
HELP3EDual-bandIMT&EGSMWCDMA3.4VLinearPowerAmplifierModule | ANADIGICS ANADIGICS, Inc | ANADIGICS | ||
DualCATV1MHzto1000MHzHighLinearityGaAsHBTAmplifier ProductDescription SirenzaMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesle | SIRENZA SIRENZA MICRODEVICES | SIRENZA | ||
DUALCATVBROADBANDHIGHLINEARITYGAASHBTAMPLIFIER ProductDescription StanfordMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesl | STANFORD Stanford Microdevices | STANFORD | ||
DUALCATV1MHzto1000MHzHIGHLINEARITYGaAsHBTAMPLIFIER ProductDescription RFMD’sCGA-6681(Z)isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesleakagecurren | RFMD RF Micro Devices | RFMD | ||
DUALCATV1MHzto1000MHzHIGHLINEARITYGaAsHBTAMPLIFIER ProductDescription RFMD’sCGA-6681(Z)isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesleakagecurren | RFMD RF Micro Devices | RFMD | ||
DualCATV1MHzto1000MHzHighLinearityGaAsHBTAmplifier ProductDescription SirenzaMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesle | SIRENZA SIRENZA MICRODEVICES | SIRENZA | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | GTMGTM CORPORATION 勤益投資控股勤益投資控股股份有限公司 | GTM | ||
integratedUSBType-C | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
integratedUSBType-C | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
PowerMOSFET Description TheIRF6609combinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutge | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Description TheIRF6618combinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutge | IRF International Rectifier | IRF | ||
IdealforCPUCoreDC-DCConverters | IRF International Rectifier | IRF | ||
DirectFET?PowerMOSFET? Description TheIRF6618PbFcombinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout | IRF International Rectifier | IRF | ||
DirectFET?PowerMOSFET? Description TheIRF6618PbFcombinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout | IRF International Rectifier | IRF | ||
IdealforCPUCoreDC-DCConverters | IRF International Rectifier | IRF | ||
130MHz,1.25mARRIOOperationalAmplifiers | TI1Texas Instruments 德州儀器 | TI1 |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
QPL |
1648 |
公司優(yōu)勢(shì)庫(kù)存 熱賣中! |
詢價(jià) | ||||
NAS |
23+ |
65480 |
詢價(jià) | ||||
N/A |
23+ |
NA |
150 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
富士通高見澤 |
2023+環(huán)保現(xiàn)貨 |
專業(yè)繼電器 |
6800 |
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù) |
詢價(jià) | ||
高見澤 |
1736+ |
RELAY |
8529 |
專營(yíng)繼電器只做原裝正品假一賠十! |
詢價(jià) | ||
NAS |
23+ |
原廠原裝有帶COC |
25749 |
##公司主營(yíng)品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價(jià) | ||
PLX |
24+ |
65200 |
詢價(jià) | ||||
PLX |
23+ |
BGA |
3000 |
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價(jià) | ||
PLX |
18+ |
BGA |
85600 |
保證進(jìn)口原裝可開17%增值稅發(fā)票 |
詢價(jià) | ||
PLX |
23+ |
BGA |
89630 |
當(dāng)天發(fā)貨全新原裝現(xiàn)貨 |
詢價(jià) |
相關(guān)規(guī)格書
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- NASE2R2M50V4X5.5NBF
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- NASE330M10V5X55NBF
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- NASE330M35V63X55NBF
- NASE330M50V63X8NBF
- NASE330M50V8X105LBF
- NASE331M10V8X105LBF
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更多- NAS6620
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- NASE101M16V6.3X5.5NBF
- NASE101M25V6.3X8NBF
- NASE101M35V10X10.5LBF
- NASE101M35V8X10.5LBF
- NASE101M50V10X10.5LBF
- NASE101M50V8X10.5LBF
- NASE101M6.3V6.3X5.5NBF
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- NASE220M50V6.3X5.5NBF
- NASE220M6.3V4X5.5NBF
- NASE221M10V6.3X8NBF
- NASE221M16V8X10.5LBF
- NASE221M25V10X10.5LBF
- NASE221M25V8X10.5LBF
- NASE221M35V10X10.5LBF
- NASE221M35V8X105LBF
- NASE2R2M50V4X55NBF
- NASE330M10V5X5.5NBF
- NASE330M16V5X5.5NBF
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