IRF6618中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF6618規(guī)格書詳情
Description
The IRF6609 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.
? Low Conduction Losses
? Low Switching Losses
? Ideal Synchronous Rectifier MOSFET
? Low Profile (<0.7 mm)
? Dual Sided Cooling Compatible
? Compatible with existing Surface Mount Techniques
產(chǎn)品屬性
- 型號：
IRF6618
- 功能描述：
MOSFET 30V N-CH 2.2mOhm HEXFET 43 nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Infineon/英飛凌 |
23+ |
MG-WDSON-5 |
25000 |
原裝正品,假一賠十! |
詢價(jià) | ||
IR |
1802+ |
QFN |
6528 |
只做原裝正品現(xiàn)貨,或訂貨假一賠十! |
詢價(jià) | ||
IR |
DirectFETMP |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
只做原裝 |
24+ |
DIRECTFET |
36520 |
一級代理/放心采購 |
詢價(jià) | ||
原廠 |
23+ |
SOT23-5 |
9000 |
原裝正品,假一罰十 |
詢價(jià) | ||
INFINEON |
22+ |
QFN |
3862 |
原廠原裝,價(jià)格優(yōu)勢!13246658303 |
詢價(jià) | ||
IR |
23+ |
PLL |
999999 |
原裝正品現(xiàn)貨量大可訂貨 |
詢價(jià) | ||
Infineon/英飛凌 |
21+ |
MG-WDSON-5 |
6820 |
只做原裝,質(zhì)量保證 |
詢價(jià) | ||
IR |
22+ |
DirectFETMT |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
IOR |
04+ |
晶震 |
2145 |
全新原裝進(jìn)口自己庫存優(yōu)勢 |
詢價(jià) |
