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N04Q1612C2BB2-15I中文資料NANOAMP數(shù)據(jù)手冊PDF規(guī)格書

N04Q1612C2BB2-15I
廠商型號

N04Q1612C2BB2-15I

功能描述

4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K?16 bit POWER SAVER TECHNOLOGY

文件大小

298.83 Kbytes

頁面數(shù)量

13

生產(chǎn)廠商 NanoAmp Solutions, Inc.
企業(yè)簡稱

NANOAMP

中文名稱

NanoAmp Solutions, Inc.官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二

更新時間

2024-12-25 14:23:00

N04Q1612C2BB2-15I規(guī)格書詳情

Overview

The N04Q16yyC2B are ultra-low power memory devices containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide ultra-low active and standby power.

Features

? Multiple Power Supply Ranges

1.1V - 1.3V

1.65V - 1.95V

2.3V - 2.7V

2.7V - 3.6V

? Dual Vcc / VccQ Power Supplies

1.2V Vcc with 3V VccQ

1.8V Vcc with 3V VccQ

2.5V Vcc with 3V VccQ

? Very low standby current

50nA typical for 1.2V operation

? Very low operating current

400μA typical for 1.2V operation at 1μs

? Very low Page Mode operating current

80μA typical for 1.2V operation at 1μs

? Simple memory control

Dual Chip Enables (CE1 and CE2)

Byte control for independent byte operation

Output Enable (OE) for memory expansion

? Automatic power down to standby mode

? BGA, TSOP and KGD options

? RoHS Compliant

產(chǎn)品屬性

  • 型號:

    N04Q1612C2BB2-15I

  • 制造商:

    NANOAMP

  • 制造商全稱:

    NANOAMP

  • 功能描述:

    4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K】16 bit POWER SAVER TECHNOLOGY

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
RENESAS/瑞薩
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RENESAS/瑞薩
20+
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120000
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RENESAS/瑞薩
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90000
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RENESAS/瑞薩
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SOT23F
8500
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AMI
23+
原廠原包
19960
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16+
900
原裝現(xiàn)貨假一罰十
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RENESAS/瑞薩
21+
SOT23F
10000
原裝現(xiàn)貨假一罰十
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RENESAS/瑞薩
23+
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54258
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費!
詢價