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MTW35N15E中文資料Motorola數(shù)據(jù)手冊PDF規(guī)格書

MTW35N15E
廠商型號

MTW35N15E

功能描述

TMOS POWER FET 35 AMPERES 150 VOLTS RDS(on) = 0.05 OHM

文件大小

169.25 Kbytes

頁面數(shù)量

8

生產(chǎn)廠商 Motorola, Inc
企業(yè)簡稱

Motorola

中文名稱

Motorola, Inc官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-10-24 22:50:00

MTW35N15E規(guī)格書詳情

This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

? Avalanche Energy Specified

? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

? Diode is Characterized for Use in Bridge Circuits

? IDSS and VDS(on) Specified at Elevated Temperature

? Isolated Mounting Hole Reduces Mounting Hardware

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