MTW32N25E中文資料Motorola數(shù)據(jù)手冊PDF規(guī)格書
MTW32N25E規(guī)格書詳情
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSSand VDS(on)Specified at Elevated Temperature
? Isolated Mounting Hole Reduces Mounting Hardware
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
TO247 |
58000 |
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詢價 | ||
ON(安森美) |
23+ |
NA |
20094 |
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詢價 | ||
ON |
2023+ |
TO-247 |
80000 |
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詢價 | ||
MIT |
2315+ |
SOD-323 |
6860 |
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詢價 | ||
ON/安森美 |
23+ |
NA/ |
13888 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
FRE |
23+ |
TO-247 |
15887 |
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詢價 | ||
mot |
24+ |
N/A |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 | ||
ON |
23+ |
TO-247 |
6893 |
詢價 | |||
24+ |
3920 |
詢價 | |||||
on |
TO247 |
68900 |
原包原標簽100%進口原裝常備現(xiàn)貨! |
詢價 |