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MTW32N25E中文資料Motorola數(shù)據(jù)手冊PDF規(guī)格書

MTW32N25E
廠商型號

MTW32N25E

功能描述

TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM

文件大小

151.89 Kbytes

頁面數(shù)量

8

生產(chǎn)廠商 Motorola, Inc
企業(yè)簡稱

Motorola

中文名稱

Motorola, Inc官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-10-24 20:00:00

MTW32N25E規(guī)格書詳情

N–Channel Enhancement–Mode Silicon Gate

This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits

where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

? Avalanche Energy Specified

? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

? Diode is Characterized for Use in Bridge Circuits

? IDSSand VDS(on)Specified at Elevated Temperature

? Isolated Mounting Hole Reduces Mounting Hardware

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6980
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ON
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24+
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on
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