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MTP1N50E

TMOS POWER FET 1.0 AMPERES 500 VOLTS RDS(on) = 5.0 OHM

TMOSE?FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhi

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP1N50E

N??hannel TO??20 Power MOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

PHP1N50E

PowerMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopefeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePowerSupplies

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHX1N50E

PowerMOStransistorIsolatedversionfoPHP1N50E

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinafullpack,plasticenvelopefeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePow

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

RM1N50

Highvoltagelinear120/220V6Wfullvoltagefilamentlampsolution

REACTORShaanxi Reactor Microelectronics Co., Ltd.

亞成微陜西亞成微電子股份有限公司

RM1N50

Highvoltagelinear120/220V50Wfullvoltagefloodlightsolution

REACTORShaanxi Reactor Microelectronics Co., Ltd.

亞成微陜西亞成微電子股份有限公司

RM1N50

Highvoltagelinear120/220V10Wfullvoltagebulblampsolution

REACTORShaanxi Reactor Microelectronics Co., Ltd.

亞成微陜西亞成微電子股份有限公司

SSI1N50B

520VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SSP1N50A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SSP1N50B

520VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號：

    MTP1N50E

  • 制造商：

    Rochester Electronics LLC

  • 功能描述：

    - Bulk

供應(yīng)商型號品牌批號封裝庫存備注價格
onsemi(安森美)
23+
-
7793
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
ON
24+
N/A
1000
詢價
MOT
06+
TO-220
3000
原裝庫存
 詢價
MOTOROLA
2023+
TO-220
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
VISHAY/威世
23+
TO-220AB
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢價
O
23+
TO220AB
10000
公司只做原裝正品
 詢價
ON/安森美
2022+
TO-220
12888
原廠代理 終端免費(fèi)提供樣品
 詢價
VB
TO220AB
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
 詢價
O
23+
TO220AB
6000
原裝正品，支持實(shí)單
 詢價
MOTOLA
23+
2800
正品原裝貨價格低
 詢價
更多MTP1N50E供應(yīng)商 更新時間2025-2-21 16:03:00

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