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MTD9N10D

POWER MOSFET 9 AMPS, 100 VOLTS

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTD9N10E

POWERMOSFET9AMPS,100VOLTS

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTD9N10E

TMOSPOWERFET9.0AMPERES100VOLTSRDS(on)=0.25OHM

TMOSE-FETPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoveryt

Motorola

Motorola, Inc

MTD9N10E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=7A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,p

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PJD9N10A

100VN-ChannelMOSFET

Features ?RDS(ON),VGS@10V,ID@4.5A

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

PJD9N10A

100VN-ChannelMOSFET

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

STD9N10

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

FEATURESSUMMARY ■TYPICALRDS(on)=0.23? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION ■THROUGH-HOLEIPAK(TO-251)POWERPACKAG

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

STD9N10

N-CHANNEL100V-0.23ohm-9ADPAK/IPAKPOWERMOSTRANSISTOR

FEATURESSUMMARY ■TYPICALRDS(on)=0.23? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION ■THROUGH-HOLEIPAK(TO-251)POWERPACKAG

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

STD9N10L

N-CHANNEL100V-0.22ohm-9AIPAK/DPAKPOWERMOSTRANSISTOR

N-CHANNEL100V-0.22?-9AIPAK/DPAKPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.22? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■HIGHdV/dtRUGGEDNESS ■APPLICATIONORIENTEDCHARACTER

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

SW9N10V

N-channelEnhancedmodeTO-252MOSFET

SEMIPOWERXian Semipower Electronic Technology Co., Ltd.

芯派科技芯派科技股份有限公司

T9N10E

N-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

詳細(xì)參數(shù)

  • 型號：

    MTD9N10D

  • 制造商：

    ONSEMI

  • 制造商全稱：

    ON Semiconductor

  • 功能描述：

    POWER MOSFET 9 AMPS, 100 VOLTS

供應(yīng)商型號品牌批號封裝庫存備注價格
ON/安森美
23+
TO252
15238
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
ON
23+
TO-252
6893
詢價
ON
24+
N/A
2800
詢價
MOTOROLA
16+
7860
原裝現(xiàn)貨假一罰十
 詢價
ON
23+
TO-251
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
ON
20+
TO-251
90000
原裝正品現(xiàn)貨/價格優(yōu)勢
 詢價
ON
2023+
SOT252
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
ON
21+
TO-251
35200
一級代理/放心采購
 詢價
ON
01+
TO-251
3000
現(xiàn)貨
 詢價
ON/安森美
21+
TO-252(DPAK)
30000
只做正品原裝現(xiàn)貨
 詢價
更多MTD9N10D供應(yīng)商 更新時間2024-10-24 9:30:00

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