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STD9N10

N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR

FEATURESSUMMARY ■TYPICALRDS(on)=0.23? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION ■THROUGH-HOLEIPAK(TO-251)POWERPACKAG

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD9N10

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

FEATURESSUMMARY ■TYPICALRDS(on)=0.23? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION ■THROUGH-HOLEIPAK(TO-251)POWERPACKAG

STMICROELECTRONICSSTMicroelectronics

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STD9N10-1

Marking:D9N10;Package:IPAK;N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR

FEATURESSUMMARY ■TYPICALRDS(on)=0.23? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION ■THROUGH-HOLEIPAK(TO-251)POWERPACKAG

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD9N10L

N - CHANNEL 100V - 0.22ohm - 9A IPAK/DPAK POWER MOS TRANSISTOR

N-CHANNEL100V-0.22?-9AIPAK/DPAKPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.22? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■HIGHdV/dtRUGGEDNESS ■APPLICATIONORIENTEDCHARACTER

STMICROELECTRONICSSTMicroelectronics

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STD9N10T4

Marking:D9N10;Package:DPAK;N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR

FEATURESSUMMARY ■TYPICALRDS(on)=0.23? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION ■THROUGH-HOLEIPAK(TO-251)POWERPACKAG

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD9N10-1

N-Channel 100-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

MTD9N10D

POWERMOSFET9AMPS,100VOLTS

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTD9N10E

POWERMOSFET9AMPS,100VOLTS

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTD9N10E

TMOSPOWERFET9.0AMPERES100VOLTSRDS(on)=0.25OHM

TMOSE-FETPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoveryt

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD9N10E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=7A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,p

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    STD9N10

  • 功能描述:

    MOSFET RO 511-STD10NF10 TO-252 N-CH 100V 9A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
ST/意法
24+
TO-252
20000
只做原廠渠道 可追溯貨源
詢價(jià)
ON
24+
TO-252
504536
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
詢價(jià)
ST
05+
原廠原裝
14476
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價(jià)
24+
N/A
1530
詢價(jià)
SGSTHOMSON
24+
原封裝
1580
原裝現(xiàn)貨假一罰十
詢價(jià)
ST
2015+
IPAKTO-
12500
全新原裝,現(xiàn)貨庫存長期供應(yīng)
詢價(jià)
ST
23+
TO-252
8795
詢價(jià)
ST
16+
SMD
8000
原裝現(xiàn)貨請(qǐng)來電咨詢
詢價(jià)
ST
2020+
SMD
350000
100%進(jìn)口原裝正品公司現(xiàn)貨庫存
詢價(jià)
ON
23+
TO-252
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價(jià)
更多STD9N10供應(yīng)商 更新時(shí)間2025-3-13 16:36:00